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GB50SLT12-247 |
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| Part Number | GB50SLT12-247 |
| Manufacturer | GeneSiC |
| Description | GB50SLT12-247 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resista... |
| Features |
• High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds Package VRRM IF (Tc = 135°C) QC = 1200 V = 103 A = 199 nC 2 1 TO-247-2L Advantages • Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device C... |
| Document |
 GB50SLT12-247 Data Sheet
PDF 512.14KB |
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Desde 2024. D4U Semiconductor.
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