logo

Galaxy Semi-Conductor 2SC DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
2SC2712

Galaxy Semi-Conductor
Silicon NPN Transistor
z z z z Low noise:NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. Production specification 2SC2712 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23
Datasheet
2
2SC4097W

Galaxy Semi-Conductor
Silicon Epitaxial Planar Transistor
z z Excellent hFE linearity. Power dissipation:PCM=200mW Production specification 2SC4097W Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. 2SC4097W Marking CP/CQ/CR Package Code SOT-323
Datasheet
3
2SC4081W

Galaxy Semi-Conductor Holdings Limited
Silicon Epitaxial Planar Transistor
z z Excellent hFE linearity. Complements the 2A1576A Production specification 2SC4081W Pb Lead-free www.DataSheet4U.com APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. 2SC4081W Marking BQ/BR/BS Pac
Datasheet
4
2SC2412

Galaxy Semi-Conductor
Silicon Epitaxial Planar Transistor
Production specification 2SC2412 Pb z z Low Cob,Cob=2.0Pf Complementary to 2SA1037 Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2412 Marking BQ,BR,BS Package Code SOT-23 MAXIMUM RATING
Datasheet
5
2SC4102W

Galaxy Semi-Conductor
Silicon Epitaxial Planar Transistor
z z Excellent hFE linearity. Power dissipation:PCM=200mW Production specification 2SC4102W Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. 2SC4102W Marking CP/CQ/CR Package Code SOT-323
Datasheet
6
2SC2411

Galaxy Semi-Conductor
Silicon Transistor
Production specification 2SC2411 Pb z Power dissipation: PCM=200mW Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor ORDERING INFORMATION Type No. 2SC2411 Marking CP/CQ/CR SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unle
Datasheet
7
2SC2714

Galaxy Semi-Conductor
Silicon Transistor
z Small reverse transfer capacitance: Cre=0.7pF(Typ.) z Low noise Figure:NF=2.5dB(Typ.) f=100MHz. Production specification 2SC2714 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Ty
Datasheet
8
2SC2715

Galaxy Semi-Conductor
NPN Transistor
z Power dissipation. Production specification 2SC2715 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. 2SC2715 Marking RR1/RO1/RY1 Package Code SOT-23 MAXIMUM RATING @ Ta=
Datasheet
9
2SC4215W

Galaxy Semi-Conductor
NPN Silicon Transistor
z Power dissipation.(PC=100mW) Production specification 2SC4215W Pb Lead-free APPLICATIONS www.DataSheet4U.com z Audio frequency general purpose amplifier. ORDERING INFORMATION Type No. 2SC4215W Marking QR/QO/QY SOT-323 Package Code SOT-323
Datasheet
10
2SC3356W

Galaxy Semi-Conductor Holdings Limited
Silicon NPN Transistor
z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz Production specification 2SC3356W Pb Lead-free z High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-
Datasheet
11
2SC1623W

Galaxy Semi-Conductor
NPN Transistor
z z z High DC current gain: hFE=200TYP. High voltage: VCEO=50V. Power dissipation.(PC=200mW) Production specification 2SC1623W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier. ORDERING INFORMATION Type No. 2SC1623W Marking
Datasheet
12
2SC1654

Galaxy Semi-Conductor
Silicon Epitaxial Planar Transistor
z High DC current gain:hFE=130(Typ) (VCE=3V,IC=15mA) z High voltage. Production specification 2SC1654 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. 2SC1654 Marking N5/N6/
Datasheet
13
2SC3930W

Galaxy Semi-Conductor
NPN Silicon Transistor
z z High transition frequency fT. Optimum for RF amplification of FM/AM radios. z For high-frequency amplification complementary to 2SA1532. Production specification 2SC3930W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier.
Datasheet
14
2SC4177W

Galaxy Semi-Conductor
Silicon Epitaxial Planar Transistor
z z z z Excellent hFE linearity. High voltage and current. Complementary to 2SA1611. Small package. Production specification 2SC4177W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier. SOT-323 ORDERING INFORMATION Type No. 2
Datasheet
15
2SC4180W

Galaxy Semi-Conductor
Silicon Epitaxial Planar Transistor
z z z z Excellent hFE linearity. High voltage and current. Power dissipation PC=150mW. Small package. Production specification 2SC4180W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier. SOT-323 ORDERING INFORMATION Type No.
Datasheet
16
2SC4226W

Galaxy Semi-Conductor
NPN Transistor
z z z Low noise. High gain. Power dissipation.(PC=150mW) Production specification 2SC4226W Pb Lead-free APPLICATIONS z High frequency low noise amplifier. SOT-323 ORDERING INFORMATION Type No. 2SC4226W Marking r23/r24/r25 Package Code SOT-323
Datasheet
17
2SC5344

Galaxy Semi-Conductor
Silicon Epitaxial Planar Transistor
z z Excellent hFE linearity Power dissipation. Production specification 2SC5344 Pb Lead-free APPLICATIONS z General small signal amplifier. SOT-23 ORDERING INFORMATION Type No. 2SC5344 Marking FAO/FAY Package Code SOT-23 MAXIMUM RATING @ Ta=25℃
Datasheet
18
2SC5345

Galaxy Semi-Conductor
Silicon Epitaxial Planar Transistor
z z z z High current transition frequency. Low output capacitance:Cob=1.4pF Low base time constant and high gain. Excellent noise response. Production specification 2SC5345 Pb Lead-free APPLICATIONS z General small signal amplifier. SOT-23 ORDE
Datasheet



logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad