2SC4097W |
Part Number | 2SC4097W |
Manufacturer | Galaxy Semi-Conductor |
Description | BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z Excellent hFE linearity. Power dissipation:PCM=200mW Production specification 2SC4097W Pb Lead-free APPLICATIONS z NPN Silicon... |
Features |
z z Excellent hFE linearity. Power dissipation:PCM=200mW
Production specification
2SC4097W
Pb
Lead-free
APPLICATIONS
z NPN Silicon Epitaxial Planar Transistor. SOT-323
ORDERING INFORMATION
Type No. 2SC4097W Marking CP/CQ/CR
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 40 32 5 500 200 -55~150 Units V V V mA mW ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless ot... |
Document |
2SC4097W Data Sheet
PDF 151.59KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC4097 |
Rohm |
Medium Power Transistor | |
2 | 2SC4097 |
SeCoS |
NPN Plastic-Encapsulate Transistor | |
3 | 2SC4097 |
GME |
Silicon Epitaxial Planar Transistor | |
4 | 2SC4097-P |
MCC |
NPN Silicon Epitaxial Transistors | |
5 | 2SC4097-Q |
MCC |
NPN Silicon Epitaxial Transistors | |
6 | 2SC4097-R |
MCC |
NPN Silicon Epitaxial Transistors |