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GME |
N-Channel Power MOSFET RDS(ON) =1.1Ω@ VGS = 10V Ultra Low Gate Charge ( Typical 45 nC ) Pb Lead-free Low Reverse Transfer Capacitance ( CRSS = Typical 15 pF ) Fast Switching Capability Avalanche Energy Specified Improved dv/dt Capability, High Ruggedness |
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GME |
N-Channel Power MOSFET High switching speed. RDS(ON)=0.65Ω @ VGS=10V. 100% avalanche tested. Very Good Manufacturing Reliabilty. Pb Lead-free APPLICATIONS N-Channel Power MOSFET. Switching Applications. ITO-220AB MAXIMUM RATINGS (TC=25°C, unless otherwise s |
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GME |
N-Channel Power MOSFET Fast Switching Pb ESD Improved Capability Lead-free ow Gate Charge (Typical Data:38nC) Low Reverse transfer capacitances(Typical:15pF) 100% Single Pulse avalanche energy Test APPLICATIONS Power switch circuit of adaptor and charge |
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GME |
N-Channel Power Mosfet Extremely High dv/dt Capability. 100% AvalancheTtested. Gate Charge Minimized. Very Good Manufacturing Reliabilty. Pb Lead-free APPLICATIONS N-channel Enhancement mode Effect Transistor. Switching Applications. TO-220AB MAXIMUM RATING |
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GME |
Silicon Bridge Rectifiers z Rating to 1000V PRV z Surge overload rating to 150 Amperes peak z Ideal for printed circuit board z Reliable low cost construction utilizing molded plastic technique results in inexpensive product z Lead solderable per MIL-STD-202 method 208 KBL00 |
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GME |
N-Channel Power MOSFET RDS(on) = 240 m (Typ.) @ VGS = 10 V, ID = 7.5 A Low Gate Charge (Typ. 28 nC) Low Crss (Typ. 17 pF) 100% Avalanche Tested Improved dv/dt Capability RoHS Compliant APPLICATIONS Lighting Uninterruptible Power Supply MOSFET Maximum Rat |
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GME |
N-Channel Power Mosfet High switching speed. RDS(ON)=0.65Ω @ VGS=10V. 100% avalanche tested. Very Good Manufacturing Reliabilty. Pb Lead-free APPLICATIONS N-Channel Power MOSFET. Switching Applications. TO-220AB MAXIMUM RATINGS (TC=25°C, unless otherwise sp |
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GME |
Schottky Barrier Rectifier z Metal-Semiconductor Junction with Guardring. z Epitaxial Construction. Pb z Lead-free Low Forward Voltage Drop,Low Switching Losses. z High Surge Capability. z For Use in Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Prote |
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GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protect |
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GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protect |
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GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protect |
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GME |
N-Channel Power MOSFET RDS(ON) =9.3Ω@VGS = 10V. Pb Ultra Low gate charge (typical 5.0nC) Lead-free Low reverse transfer capacitance (CRSS = typical 3.0 pF) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness B |
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GME |
N-Channel Power MOSFET R =0.16Ω @ V =10V DS(ON) GS High switching speed APPLICATIONS N-Channel Power MOSFET. Switching Applications. Production specification BL18N25F MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter Value ITO-220AB Un |
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GME |
N-Channel Power Mosfet DPAK Worldwide Best RDS(on). High dv/dt Capability. Excellent Switching Performace. Pb Lead-free Easy to Drive. 100% Avalanche Tested. APPLICATIONS N-channel Enhancement mode Effect Transistor. Switching Applications. TO-220AB M |
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GME |
N-Channel Power Mosfet |
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GME |
N-Channel Power Mosfet RDS(ON) =9.3Ω@VGS = 10V. Pb Ultra Low gate charge (typical 5.0nC) Lead-free Low reverse transfer capacitance (CRSS = typical 3.0 pF) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness B |
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GME |
Schottky Barrier Rectifier z Metal-Semiconductor Junction with Guardring. z Epitaxial Construction. Pb z Lead-free Low Forward Voltage Drop,Low Switching Losses. z High Surge Capability. z For Use in Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Prote |
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GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protect |
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GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protect |
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GME |
Schottky Barrier Rectifier z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protect |
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Desde 2024. D4U Semiconductor.
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