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BL1N60F |
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| Part Number | BL1N60F |
| Manufacturer | GME |
| Title | N-Channel Power MOSFET |
| Features |
RDS(ON) =9.3Ω@VGS = 10V. Pb Ultra Low gate charge (typical 5.0nC) Lead-free Low reverse transfer capacitance (CRSS = typical 3.0 pF) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness BL1N60F ITO-220AB MAXIMUM RATING operating temper... |
| Document |
 BL1N60F Data Sheet
PDF 213.10KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BL1N60 |
GME |
N-Channel Power Mosfet |
|
| 2 | BL1002A |
Bolymin |
Display |
|
| 3 | BL1005-05A5425B |
Advanced Ceramic X |
Multilayer Chip Baluns |
|
| 4 | BL1005-05A5425T |
Advanced Ceramic X |
Multilayer Chip Baluns |
|
| 5 | BL1005-05E2450B |
Advanced Ceramic X |
Multilayer Chip Baluns |
|
| 6 | BL1005-05E2450T |
Advanced Ceramic X |
Multilayer Chip Baluns |
|
Desde 2024. D4U Semiconductor.
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