GME 2SA Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SA812	GME	Silicon Epitaxial Planar Transistor z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) z High Voltage: VCEO=-50V. Pb Lead-free 2SA812 APPLICATIONS z Audio frequency, general purpose amplifier. ORDERING INFORMATION Type No. Marking 2SA812 M4/M5
2	2SA1797	GME	PNP Transistor  Low saturation voltage VCE(sat)=-0.35V(Max.) (IC/IB=-1A/-0.5A).  Excellent DC current gain characteristics.  Complements the 2SA1797 and 2SC4672.  MSL 3 APPLICATIONS  Low frequency transistor. Pb Lead-free ORDERING INFORMATION Type No. Mark
3	2SA733	GME	Silicon Epitaxial Planar Transistor  Excellent hFE Linearity.  Power dissipation：PD=250mW.  High hFE. Pb Lead-free 2SA733 APPLICATIONS  Designed for use in driver stage of amplifier. ORDERING INFORMATION Type No. Marking 2SA733 CS SOT-23 Package Code SOT-23 MAXIMUM RATING
4	2SA1012	GME	PNP Epitaxial Silicon Transistor  Low Collector Saturation Voltage. VCE(sat)=-0.4V(Max.)at IC=-3A  Complements the 2SC2562. Pb Lead-free  High Speed Switching Time:tstg=1.0µs(Typ.) Production specification 2SA1012 TO-220AB MAXIMUM RATING operating temperature range applies
5	2SA1662	GME	Silicon NPN Transistor  Complementary to KTC4374 Pb Lead-free Production specification 2SA1662 ORDERING INFORMATION Type No. Marking 2SA1662 FO/FY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Colle
6	2SA1774	GME	PNP General Purpose Transistor  Excellent hFE linearity.  Complementary NPN type available (2SC4617).  MSL 1 APPLICATIONS  Epitaxial planar type.  PNP silicon transistor. Pb Lead-free ORDERING INFORMATION Type No. Marking 2SA1774 FQ/FR/FS 2SA1774 SOT-523 Package Code S
7	2SA1576A	GME	PNP Silicon Transistor  Power dissipation.(PC=200mW)  Excellent HFE Linearity.  Complements the 2SC4081. Pb Lead-free 2SA1576A APPLICATIONS  General purpose application.  Switching and amplification. ORDERING INFORMATION Type No. Marking 2SA1576A FQ/FR/FS SOT
8	2SA1832	GME	Plastic-Encapsulate Transistors  High voltage and high current.  Excellent hFE linearity.  High hFE.  Complementary to 2sc4738.  Small package. Pb Lead-free Production specification 2SA1832 ORDERING INFORMATION Type No. Marking 2SA1832 SO/SY/SG SOT-523 Package Code SOT
9	2SA1162	GME	Silicon Epitaxial Planar Transistor  Excellent hFE linearity.  Commplementary to 2SC2712.  High voltage and high current.  Low noise. Pb Lead-free 2SA1162 APPLICATIONS  General purpose application. ORDERING INFORMATION Type No. Marking 2SA1162 SO/SY/SG SOT-23 Package Code
10	2SA1015	GME	Silicon Epitaxial Planar Transistor z Complementary To 2SC1815. z Excellent HFE Linearity. Pb Lead-free z High voltage and high current. z Low noise. z Collector-Emitter voltage BVCEO=-50V. APPLICATIONS z Low frequency , low noise amplifier. Production specification 2SA1015 SOT-2
11	2SA1611	GME	PNP Silicon Transistor  High voltage VCEO=-50V.  Excellent HFE Linearity.  High DC current gain : hFE=200 typ.  Complementary to 2SC4177. Pb Lead-free Production specification 2SA1611 APPLICATIONS  Audio frequency general purpose amplifier applications. ORDERING I
12	2SA2018	GME	LOW FREQUENCY TRANSISTOR  A collceter current is large.  Collecter saturation voltage is low. VCE(sat)≤250mV At IC=-200mA/IB=-10mA Pb Lead-free APPLICATIONS  For switching,for muting. Production specification 2SA2018 SOT-523 ORDERING INFORMATION Type No. Marking 2S
13	2SA1586	GME	PNP Silicon Transistor  High voltage and high current.  Excellent HFE Linearity.  High hFE linearity.  Complementary to 2SC4116. Pb Lead-free Production specification 2SA1586 APPLICATIONS  Audio frequency general purpose amplifier applications. ORDERING INFORMATIO
14	2SA1579	GME	PNP Silicon Transistor  Power dissipation.(PC=200mW)  Excellent HFE Linearity. Pb Lead-free Production specification 2SA1579 APPLICATIONS  General purpose application. ORDERING INFORMATION Type No. Marking 2SA1579 RP/ RR/RS SOT-323 Package Code SOT-323 MAXIMUM
15	2SA1700	GME	PNP Epitaxial Planar Silicon Transistor z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearity. Pb Lead-free Production specification 2SA1700 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value
16	2SA1235A	GME	Silicon Epitaxial Planar Transistor  Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). Pb Lead-free  Excellent lineary DC forward current gain.  Super mini package for easy mounting. 2SA1235A APPLICATIONS  PNP epitaxial type transistor desi
17	2SA1037	GME	Silicon Epitaxial Planar Transistor  Excellent hFE Linearity.  Complments the 2SC2412. Pb Lead-free APPLICATIONS  Ideal for low-voltage operation. Production specification 2SA1037 ORDERING INFORMATION Type No. Marking 2SA1037 FQ/FR/FS SOT-23 Package Code SOT-23 MAXIMUM RAT
18	2SA1036	GME	Silicon Epitaxial Planar Transistor  Large IC.ICMAX. =-500mA. Pb Lead-free  Low VCE(sat). Ideal for low-voltage operation.  Complements the 2SC2411. 2SA1036 APPLICATIONS  Ideal for low-voltage operation. ORDERING INFORMATION Type No. Marking 2SA1036 HP/HQ/HR SOT-23 Pack
19	2SA1213	GME	Silicon Planar Epitaxial Transistor z Low saturation voltage z High speed switching time Pb Lead-free z Small flat package z PC=1.0 to 2.0W(mounted on ceramic substrate) z Complementary to 2SC2873 Production specification 2SA1213 ORDERING INFORMATION Type No. Marking 2SA1213
20	2SA1201	GME	Plastic-Encapsulate Transistors z High voltage z High transition frequency z Small flatpackage z Complementary to 2SC2881 Pb Lead-free Production specification 2SA1201 ORDERING INFORMATION Type No. Marking 2SA1201 DO/DY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ un