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Fairchild Semiconductor SGL DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
SGL50N60RUFD

Fairchild Semiconductor
IGBT

• 50 A, 600 V, TC = 100°C
• Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 50 A
• Typical Fall Time. . . . . . . . . .261ns at TJ = 125°C
• High Speed Switching
• High Input Impedance
• Short Circuit Rating Applications Motor Control, UPS, General
Datasheet
2
FSGL130R

Fairchild Semiconductor
Radiation Hardened / SEGR Resistant N-Channel Power MOSFET

• 12*A, 100V, rDS(ON) = 0.080Ω
• UIS Rated
• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown
Datasheet
3
SGL40N150

Fairchild Semiconductor
IGBT

• High speed switching
• Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A
• High input impedance Applications Home appliances, induction heaters, IH JAR, and microwave ovens. C G GC E TO-264 Absolute Maximum Ratings TC = 25°C unless otherwi
Datasheet
4
SGL50N60RUF

Fairchild Semiconductor
IGBT

• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.2 V @ IC = 50A
• High input impedance Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C
Datasheet
5
SGL5N150UF

Fairchild Semiconductor
IGBT

• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A
• High Input Impedance Application Switching Power Supply - High Input Voltage Off-line Converter GC E TO-264 Absolute Maximum Ratings TC = 25°C unless otherwise noted
Datasheet
6
FSGL134R

Fairchild Semiconductor
Radiation Hardened / SEGR Resistant N-Channel Power MOSFET

• 10A, 150V, rDS(ON) = 0.125Ω
• UIS Rated
• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown an
Datasheet
7
SGL160N60UFD

Fairchild Semiconductor
Ultrafast IGBT

• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A
• High input impedance
• CO-PAK, IGBT with FRD: trr = 75nS (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, servo controls, and power suppl
Datasheet
8
SGL40N150D

Fairchild Semiconductor
IGBT

• High speed switching
• Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A
• High input impedance
• Built-in fast recovery diode Applications Home appliances, induction heaters, IH JAR, and microwave ovens. C GC E TO-264 Absolute Maximum Rati
Datasheet



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