FSGL130R |
Part Number | FSGL130R |
Manufacturer | Fairchild Semiconductor |
Description | FSGL130R Data Sheet www.DataSheet4U.com July 2001 File Number 4921 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle bjec tho yw s () eato OCI O mar Fairchild Star*Power™ Rad Hard MOS... |
Features |
• 12*A, 100V, rDS(ON) = 0.080Ω • UIS Rated • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS • Photo Current - 1.5nA Per-RAD (Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 ge de eO nes OC EW mar The Fairchild family of Star*Power FETs includes a series of devices... |
Document |
FSGL130R Data Sheet
PDF 217.67KB |
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