| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
500V N-Channel MOSFET • 550V @TJ = 150°C • Typ. RDS(on) = 0.265Ω @VGS = 10 V • Low gate charge (typical 42 nC) • Low Crss (typical 11 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect |
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Desde 2024. D4U Semiconductor.
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