| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
General Purpose Transistor -150mA, IB= -15mA IC= -500mA, IB= -50mA IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA VCB= -10V, IE=0 f=1MHz IC= -50mA, VCE= -20V f=100MHz VCC= -30V, IC= -150mA IB1= -15mA VCC= -6V, IC= -150mA IB1=IB2= -15mA 200 45 100 75 100 100 100 50 Min. -60 -60 - |
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Fairchild Semiconductor |
NPN Amplifier • Collector-Emitter Voltage: VCEO = 40 V • Available as PN2222A 1 23 TO-92 1. Emitter 2. Base 3. Collector Ordering Information Part Number KSP2222ABU KSP2222ATA KSP2222ATF Marking KSP2222A KSP2222A KSP2222A Package TO-92 3L TO-92 3L TO-92 3L |
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Fairchild Semiconductor |
High Voltage Transistor VCE= -10V, IC= -30mA IC= -20mA, IB= -2mA IC= -20mA, IB= -2mA VCE= -20V, IC= -10mA, f=100MHz VCB= -20V, IE=0 f=1MHz 50 6 8 25 40 25 -0.50 -0.90 V V MHz pF pF -0.25 -0.25 -0.10 µA µA µA Test Condition IC= -100µA, IE=0 Min. -300 -200 IC= -1mA, IB=0 -300 |
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Fairchild Semiconductor |
VHF/UHF transistor rrent Gain Bandwidth Product Output Capacitance Collector Base Feedback Capacitance Collector Base Time Constant Test Condition IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=2V, IC=0 VCE=10V, IC=4mA IC=4mA, IB=0.4mA VCE=10V, IC=4mA VCE= |
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Fairchild Semiconductor |
Darlington Transistor V V MHz Test Condition IC=100µA, IB=0 VCB=30V, IE=0 VEB=10V, IC=0 Min. 30 Max. 100 100 Units V nA nA * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP13/14 Typical Characteristic |
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Fairchild Semiconductor |
Amplifier Transistor CE=60V, IB=0 VCE=1V, IC=10mA VCE=1V, IC=100mA IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=2V, IC=10mA f=100MHz 100 50 50 0.25 1.2 V V MHz 0.1 0.1 0.1 µA µA µA Test Condition IC=1mA, IB=0 Min. 60 80 IE=100µA, IC=0 4 Max. Units V V V BVEBO ICBO * Pulse Te |
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Fairchild Semiconductor |
Darlington Transistor V V MHz Test Condition IC=100µA, IB=0 VCB=30V, IE=0 VEB=10V, IC=0 Min. 30 Max. 100 100 Units V nA nA * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP13/14 Typical Characteristic |
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Fairchild Semiconductor |
Amplifier Transistor CE=60V, IB=0 VCE=1V, IC=10mA VCE=1V, IC=100mA IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=2V, IC=10mA f=100MHz 100 50 50 0.25 1.2 V V MHz 0.1 0.1 0.1 µA µA µA Test Condition IC=1mA, IB=0 Min. 60 80 IE=100µA, IC=0 4 Max. Units V V V BVEBO ICBO * Pulse Te |
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Fairchild Semiconductor |
VHF Transistor MHz VCB=10V, IE=0, f=1MHz VCC=20V, IC=8mA Oscillator Injection=150mV VCC=20V, IC=8mA Oscillator Injection=150mV 19 24 30 400 620 0.25 24 29 0.36 MHz pF dB dB Min. 40 30 4.0 50 Typ. Max. Units V V V nA ©2001 Fairchild Semiconductor Corporation Rev. |
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Fairchild Semiconductor |
Darlington Transistor , IB=0 VCE=5V, IC=10mA VCE=5V, IC=100mA IC=100mA, IB=0.1mA VCE=5V, IC=100mA 10K 10K 1.5 2 V V 100 100 100 100 nA nA nA nA Test Condition IC=100µA, IE=0 Min. 40 50 60 IC=100µA, IE=0 40 50 60 V V V Max. Units V V V BVCBO ICBO * Pulse Test: PW≤300µs, |
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Fairchild Semiconductor |
High Voltage Transistor =2mA IC=20mA, IB=2mA VCB=20V, IE=0 f=1MHz VCE=20V, IC=10mA f=100MHz 50 25 40 40 0.5 0.9 3 4 V V pF pF MHz 100 100 nA nA VCB=200V, IE=0 VCB=160V, IE=0 100 100 nA nA Test Condition IC=100µA, IE=0 Min. 300 200 IC=1mA, IB=0 300 200 IE=100µA, IC=0 6 V V V |
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Fairchild Semiconductor |
Darlington Transistor , IB=0 VCE=5V, IC=10mA VCE=5V, IC=100mA IC=100mA, IB=0.1mA VCE=5V, IC=100mA 10K 10K 1.5 2 V V 100 100 100 100 nA nA nA nA Test Condition IC=100µA, IE=0 Min. 40 50 60 IC=100µA, IE=0 40 50 60 V V V Max. Units V V V BVCBO ICBO * Pulse Test: PW≤300µs, |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor =0 VCB= -80V, IE=0 VCE= -60V, IB=0 VCE= -1V, IC= -10mA VCE= -1V, IC= -100mA IC= -100mA, IB= -10mA VCE= -1V, IC= -100mA VCE= -2V, IC= -10mA f=100MHz 50 50 50 -0.25 -1.2 V V MHz -0.1 -0.1 -0.1 µA µA µA Test Condition IC= -1mA, IB=0 IE= -100µA, IC=0 Min |
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Fairchild Semiconductor |
Darlington Transistor rent Gain Bandwidth Product : KSP63/64 VCE= -5V, IC= -10mA 20K 5K 10K 10K 20K -1.0 -1.5 -1.4 -2 125 V V V V MHz VCB= -15V, IE=0 VCB= -30V, IE=0 VBE= -10V, IC=0 -100 -100 -100 nA nA nA Test Condition IC= -100µA, IB=0 Min. -20 -30 Max. Units V V ICBO |
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Fairchild Semiconductor |
General Purpose Transistor A, IB=50mA VCB=10V, IE=0, f=1MHz VCE=20V, IC=20mA f=100MHz VCC=30V, VBE(off)=0.5V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=IB2=15mA 250 35 285 35 50 75 100 30 Min. 60 30 5 10 Typ. Max. Units V V V nA 300 0.4 1.6 1.3 2.6 8 V V V V pF MHz ns ns VCE ( |
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Fairchild Semiconductor |
Darlington Transistor , IB=0 VCE=5V, IC=10mA VCE=5V, IC=100mA IC=100mA, IB=0.1mA VCE=5V, IC=100mA 10K 10K 1.5 2 V V 100 100 100 100 nA nA nA nA Test Condition IC=100µA, IE=0 Min. 40 50 60 IC=100µA, IE=0 40 50 60 V V V Max. Units V V V BVCBO ICBO * Pulse Test: PW≤300µs, |
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Fairchild Semiconductor |
High Voltage Transistor =2mA IC=20mA, IB=2mA VCB=20V, IE=0 f=1MHz VCE=20V, IC=10mA f=100MHz 50 25 40 40 0.5 0.9 3 4 V V pF pF MHz 100 100 nA nA VCB=200V, IE=0 VCB=160V, IE=0 100 100 nA nA Test Condition IC=100µA, IE=0 Min. 300 200 IC=1mA, IB=0 300 200 IE=100µA, IC=0 6 V V V |
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Fairchild Semiconductor |
High Voltage Transistor nt Gain VCE=400V, IB=0 VCE=320V, IB=0 VEB=4V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCB=20V, IE=0, f=1MHz 40 50 45 40 0.5 0.5 0.1 200 µA µA µA VCB=400 |
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Fairchild Semiconductor |
High Frequency Transistor tor Base Time Constant Noise Figure Test Condition IC=3mA, IB=0 IC=10µA, IE=0 IE=10µA, IC=0 VCB=15V, IE=0 VCB=15V, IE=0, Ta=150°C VCB=1V, IC=3mA IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=6V, IC=5mA VCB=10V, IE=0, f=0.1 to1 MHz VCE=6V, IC=2mA, f=1KHz VCE=6V |
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Fairchild Semiconductor |
Darlington Transistor rent Gain Bandwidth Product : KSP63/64 VCE= -5V, IC= -10mA 20K 5K 10K 10K 20K -1.0 -1.5 -1.4 -2 125 V V V V MHz VCB= -15V, IE=0 VCB= -30V, IE=0 VBE= -10V, IC=0 -100 -100 -100 nA nA nA Test Condition IC= -100µA, IB=0 Min. -20 -30 Max. Units V V ICBO |
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Desde 2024. D4U Semiconductor.
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