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KSP13 |
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| Part Number | KSP13 |
| Manufacturer | Fairchild Semiconductor |
| Description | KSP13/14 KSP13/14 Darlington Transistor • Collector-Emitter Voltage: VCES=30V • Collector Power Dissipation: PC (max)=625mW 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlingto... |
| Features |
V V MHz Test Condition IC=100µA, IB=0 VCB=30V, IE=0 VEB=10V, IC=0 Min. 30 Max. 100 100 Units V nA nA
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP13/14
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1M
10
VCE = 5V
IC = 1000 IB
hFE, DC CURRENT GAIN
100k
V BE(sat)
1
V CE(sat)
10k
1k
1
10
100
1000
0.1 10 100
IC [mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAI... |
| Document |
 KSP13 Data Sheet
PDF 33.87KB |
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