Fairchild Semiconductor FR1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	FR120N	Fairchild Semiconductor	IRFR120N • 8.4A, 100V • rDS(ON) = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Sur
2	FSFR1800US	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode Fixed Dead Time (350ns) Optimized for M
3	FSFR1700USL	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode Fixed Dead Time (350ns) Optimized for M
4	FSFR1800L	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns)
5	FSFR1800USL	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode Fixed Dead Time (350ns) Optimized for M
6	IRFR130A	Fairchild Semiconductor	Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 Ω (Typ.) IRFR/U130A BVDSS = 100 V RDS(on) = 0
7	FSFR1800	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal SuperFET™s with Fast-Recovery Type Body Diode (trr=120ns) for FSFR2100 and UniFETs with Fas
8	FSFR1600	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns)
9	FSFR1800	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns)
10	FSFR1700XSL	Fairchild Semiconductor	Power Switch ................................ 4 2. MECHANICAL SPECIFICATIONS ............................................................................................. 4 2.1 CONNECTOR TYPE .......................................................................
11	IRFR110	Fairchild Semiconductor	N-Channel Power MOSFETs • 4.7A, 100V • rDS(ON) = 0.540Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 175oC Operating Temperature • Related Literature - TB33
12	FSFR1900	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns)
13	FSFR1700US	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode Fixed Dead Time (350ns) Optimized for M
14	IRFR120A	Fairchild Semiconductor	Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.) IRFR/U120A BVDSS = 100 V RDS(on) = 0.
15	FSFR1900	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal SuperFET™s with Fast-Recovery Type Body Diode (trr=120ns) for FSFR2100 and UniFETs with Fas
16	FSFR1700	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns)
17	FSFR1600	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns)
18	FSFR1700L	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns)
19	FSFR1600L	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns)
20	FSFR1800XS	Fairchild Semiconductor	Power Switch ge and Currents Reverse Voltage 3.0 V Average Forward dc 'f Current/Segment or Decimal Point 25 mA Derate from 25° С Ambient Temperature 0.3mA/°C Peak Forward Current •pk Segment or Decimal Point (100 ms pulse width) 1000 pps, TA • 25°C 200 mA Vr FN