| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
FGA40N60UFD • • • • High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO- |
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Fairchild Semiconductor |
90A PDP Trench IGBT • High current capability • Low saturation voltage: VCE(sat) =1.1V @ IC = 20A • High input impedance • Fast switching • RoHS compliant Applications • PDP System April 2008 tm General Description Using Novel Trench IGBT Technology, Fairchild’s new se |
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Fairchild Semiconductor |
60A Field Stop IGBT • Maximum Junction Temperature : TJ = • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A • Fast Switching : EOFF = 7.5 uJ/A • Tighten Parameter Distribution • RoHS Compliant 175oC • Positive Temperature Co-efficien |
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Fairchild Semiconductor |
IGBT • Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1.8 V(Typ.) @ IC = 40 A • 100% of the Parts Tested for ILM(1) • High Input Impedan |
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Fairchild Semiconductor |
1200V NPT Trench IGBT • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 1.9V @ IC = 15A and TC = 25°C • Low switching loss: Eoff, typ = 0.6mJ @ IC = 15A and TC = 25°C • Extremely enhanced avalanche capability tm Descript |
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Fairchild Semiconductor |
NPT Trench IGBT • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25C • Extremely Enhanced Avalanche Capability Applicat |
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Fairchild Semiconductor |
IGBT • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applicat |
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Fairchild Semiconductor |
IGBT • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode Application UPS, Welder, Induction Heating, Microwave Oven C GCE TO-3P Absolute Maximum Ratings TC = 25C unless |
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Fairchild Semiconductor |
Field Stop Trench IGBT • Field Stop Trench Technology • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 25 A • High Input Impedance • RoHS Complaint Applications • Induction Heating, Microvewave Oven General Description Using advanced field stop tre |
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Fairchild Semiconductor |
90A PDP Trench IGBT • High current capability • Low saturation voltage: VCE(sat) =1.1V @ IC = 20A • High input impedance • Fast switching • RoHS compliant Applications • PDP System August 2011 General Description Using Novel Trench IGBT Technology, Fairchild’s new seri |
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Fairchild Semiconductor |
IGBT • Maximum Junction Temperature : TJ = 175 oC • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A • 100% of the Parts Tested for ILM (1) • High Input Im |
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Fairchild Semiconductor |
IGBT • High Speed Switching • Low Saturation Voltage: VCE(sat) = 2.0 V @ IC = 20 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave oven General Description Using advanced field stop trench and shorted anode technology, |
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Fairchild Semiconductor |
IGBT • High Speed Switching • Low Saturation Voltage: VCE(sat) = 2.25 V @ IC = 15 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology |
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Fairchild Semiconductor |
IGBT • NPT Trench Technology, Positive temperature coefficient • Low Saturation Voltage: VCE(sat), typ = 1.9 V @ IC = 15 A and TC = 25C • Low Switching Loss: Eoff, typ = 0.6 mJ @ IC = 15 A and TC = 25C • Extremely Enhanced Avalanche Capability November |
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Fairchild Semiconductor |
300V PDP IGBT • High Current Capability • Low saturation voltage: VCE(sat), Typ = 1.1 V@ IC = 40A • High Input Impedance Description Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution f |
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Fairchild Semiconductor |
IGBT • High speed switching • Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A • High input impedance Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. C G E TO-3P G C E Absolute Maximum Ratings Symbol VCE |
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Fairchild Semiconductor |
Ultrafast IGBT • • • • High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO- |
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Fairchild Semiconductor |
50A NPT-Trench IGBT CO-PAK • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A • High Input Impedance • RoHS Compliant Applications • UPS, PFC, I-H Jar, Induction Heater, Home Appliance. General Description Trench insulated gate bipolar transistors ( |
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Fairchild Semiconductor |
50A Shorted-anode IGBT • Intrinsic Anti-parallel Diode for Soft-switching Applications • High Switching Frequency Range 10 kHz to 50kHz • High Temperature Stable Behavior (Tjmax = 175oC) • Low Saturation Voltage Drop : VCE(sat) = 2.06 V @ IC = 50 A • Robust Pot Detection N |
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Fairchild Semiconductor |
IGBT • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology, |
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Desde 2024. D4U Semiconductor.
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