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FGA50N100BNT |
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| Part Number | FGA50N100BNT |
| Manufacturer | Fairchild Semiconductor |
| Description | Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices a... |
| Features |
• High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A • High Input Impedance • RoHS Compliant Applications • UPS, PFC, I-H Jar, Induction Heater, Home Appliance. General Description Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for UPS, PFC, I-H Jar, induction Heater and Home Appliance. GCE TO-3P Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Vo... |
| Document |
 FGA50N100BNT Data Sheet
PDF 690.84KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FGA50N100BNTD |
Fairchild Semiconductor |
IGBT |
|
| 2 | FGA50N100BNTD2 |
Fairchild Semiconductor |
IGBT |
|
| 3 | FGA50N60LS |
Fairchild Semiconductor |
IGBT |
|
| 4 | FGA5065ADF |
Fairchild Semiconductor |
Field Stop Trench IGBT |
|
| 5 | FGA50S110P |
Fairchild Semiconductor |
50A Shorted-anode IGBT |
|
| 6 | FGA50T65SHD |
Fairchild Semiconductor |
IGBT |
|
Desde 2024. D4U Semiconductor.
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