| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
MOSFET General Description Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A Advanced package and silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package |
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Fairchild Semiconductor |
MOSFET Q1: N-Channel Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A Low inductance packaging sho |
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Fairchild Semiconductor |
MOSFET Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A High performance technology for extremely low rDS(on) SyncFETTM Schottky Body Diode RoHS Compliant General Description This N-Channel SyncFETTM is |
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Fairchild Semiconductor |
MOSFET General Description Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A Advanced package and silicon combination for low rDS(on) and high efficiency SyncFETTM Schottky Body Diode MSL1 Robust Packag |
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Fairchild Semiconductor |
Single N-Channel PowerTrench MOSFET Max rDS(on) = 13 mΩ at VGS = 10 V, ID = 11 A Max rDS(on) = 20 mΩ at VGS = 4.5 V, ID = 9 A Low Profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm Free from halogenated compounds and antimony oxides RoHS compliant July 2012 Gener |
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Fairchild Semiconductor |
N-Channel Dual Cool PowerTrench SyncFET Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) SyncFET Schottky Body Diode RoHS Compliant Gen |
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Fairchild Semiconductor |
Driver plus FET Multi-chip Module 12V typical Input Voltage Output current up to 25A 500KHz switching frequency capable Internal adaptive gate drive Integrated bootstrap diode Peak Efficiency >85% Under-voltage Lockout Output disable for lost phase shutdown Low prof |
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Fairchild Semiconductor |
Single N-Channel PowerTrench MOSFET Max rDS(on) = 21 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 7 A Low Profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm Free from halogenated compounds and antimony oxides RoHS compliant April 2012 Gener |
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Fairchild Semiconductor |
MOSFET Typical RDS(on) = 2.4 mΩ at VGS = 10V, ID = 65 A Typical Qg(tot) = 41 nC at VGS = 10V, ID = 65 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drive |
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Fairchild Semiconductor |
MOSFET General Description Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A Low ind |
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Fairchild Semiconductor |
MOSFET General Description Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 25 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET r DS(ON) = 44mΩ (Typ.), VGS = 10V, ID = 4.4A Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) General Description This N-Channel MOSFET |
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Fairchild Semiconductor |
N-Channel MOSFET Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A HBM ESD protection level of 8 kV typical(note 3) Extended VGSS range (-25 V) for battery applications High performance trench technology fo |
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Fairchild Semiconductor |
N-Channel MOSFET General Description Shielded Gate MOSFET Technology Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust |
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Fairchild Semiconductor |
N-Channel Power Trench MOSFET Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 15 A Max rDS(on) = 9.3 mΩ at VGS = 2.5 V, ID = 12 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant General Description This device has been designed specifically to improve the e |
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Fairchild Semiconductor |
High-Frequency DrMOS such as Skip Mode (SMOD), for improved light-load efficiency, along with a three-state 3.3V PWM input for compatibility with a wide range of PWM controllers. Features Over 93% Peak-Efficiency High-Current Handling of 40A at 12VIN High-Current Handl |
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Fairchild Semiconductor |
High-Frequency DrMOS such as Skip Mode (SMOD) for improved lightload efficiency, along with a 3-state 3.3V PWM input for compatibility with a wide range of PWM controllers. Features Over 93% Peak-Efficiency High-Current Handling of 50A High-Performance PQFN Copper-Clip |
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Fairchild Semiconductor |
MOSFET Q1: N-Channel Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 12 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 5.5 mΩ at VGS = 4.5 V, ID = 14 A RoHS Compliant April 2013 |
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Fairchild Semiconductor |
MOSFET Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A Low inductance packaging shorte |
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Fairchild Semiconductor |
MOSFET Q1: N-Channel Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 8.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A Low inductance packaging s |
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Desde 2024. D4U Semiconductor.
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