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FDMC2514SDC |
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| Part Number | FDMC2514SDC |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an eff. |
| Features | Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) SyncFET Schottky Body Diode RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has . |
| Datasheet |
 FDMC2514SDC Data Sheet
PDF 251.99KB |
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FDMC2514SDC |
| Part Number | FDMC2514SDC |
| Manufacturer | ON Semiconductor |
| Title | Dual N-Channel MOSFET |
| Description | Features Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) SyncFET Schottky Body Diode RoHS Compliant This N-Channel MOSFET is produced using ON . |
| Features | Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) SyncFET Schottky Body Diode RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologi. |
FDMC2514SDC |
| Part Number | FDMC2514SDC |
| Manufacturer | VBsemi |
| Title | N-Channel MOSFET |
| Description | FDMC2514SDC N-Channel 30 V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) 30 RDS(on) () Typ. 0.004 at VGS = 4.5 V 0.005 at VGS = 2.5 V ID (A) 50 45 DFN 3x3 EP Top View Bottom View Qg (Typ.) 33.5 nC Top View FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® P. |
| Features |
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Control • Industrial • Load Switch • ORing D 1 8 2 7 G 3 6 4 5 Pin 1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VG. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDMC2512SDC |
Fairchild Semiconductor |
N-Channel MOSFET |
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| 2 | FDMC2523P |
Fairchild Semiconductor |
P-Channel QFET |
|
| 3 | FDMC2523P |
ON Semiconductor |
P-Channel MOSFET |
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| 4 | FDMC2610 |
Fairchild Semiconductor |
N-Channel UltraFET Trench MOSFET |
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| 5 | FDMC2610 |
ON Semiconductor |
N-Channel MOSFET |
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| 6 | FDMC2674 |
Fairchild Semiconductor |
N-Channel UltraFET Trench MOSFET |
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| 7 | FDMC2674 |
ON Semiconductor |
N-Channel MOSFET |
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| 8 | FDMC2D8N025S |
ON Semiconductor |
N-Channel MOSFET |
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| 9 | FDMC007N30D |
ON Semiconductor |
Dual N-Channel MOSFET |
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| 10 | FDMC008N08C |
ON Semiconductor |
N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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