Fairchild Semiconductor FCI Hoja de datos

No.	parte #	Fabricante	Descripción
1	FCI7N60	Fairchild Semiconductor	600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. RDS(on) = 0.53Ω • Ultra Low Gate Charge (typ. Qg = 25nC) • Low Effective Output Capacitance (typ. Cosseff. = 60pF) • 100% Avalanche Tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high volta
2	FCI11N60	Fairchild Semiconductor	600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Ultra Low Gate Charge (typ. Qg = 40nC) • Low Effective Output Capacitance (typ. Cosseff. = 95pF) • 100% Avalanche Tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high volta
3	FCI25N60N	Fairchild Semiconductor	N-Channel SupreMOS MOSFET • RDS(on) = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply De
4	FCI25N60N_F102	Fairchild Semiconductor	N-Channel SupreMOS MOSFET • RDS(on) = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 262 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Solar Inverter • AC-DC Power Supply Desc