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FCI25N60N_F102 |
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| Part Number | FCI25N60N_F102 |
| Manufacturer | Fairchild Semiconductor |
| Description | The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOS... |
| Features |
• RDS(on) = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 262 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs. This advanced technology and precise process control provide lowest Rsp on-resistance, superior switching performance and ruggedness. Su... |
| Document |
 FCI25N60N_F102 Data Sheet
PDF 355.27KB |
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