| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
KSD2058 30V, IC = 2A IB1 = - IB2 = 0.2A RL = 15Ω hFE Classification Classification hFE O 60 ~ 120 Y 100 ~ 200 Value 60 60 7 3 0.5 1.5 25 150 - 55 ~ 150 Units V V V A A W W °C °C Min. 60 8 Typ. 3 35 0.65 1.3 0.65 Max. 10 1 Units µA mA V 1.5 V V |
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Fairchild Semiconductor |
DUAL CHANNEL PHOTOTRANSISTOR • Dual Channel Optocoupler • Convenient Plastic SOIC-8 Surface Mountable Package Style • Two channels in one compact surface mount package • Closely Matched Current Transfer Ratios to Minimize Unit-to-Unit Variation • Minimum V(BR)CEO of 70 Volts Gua |
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Fairchild Semiconductor |
Low Frequency Power Amplifier , IC = 0.5A VCE = 5V, IC = 0.5A VCB = 10V, f = 1MHz VCC = 30V, IC = 2A IB1 = - IB2 = 0.2A RL = 15Ω 35 0.65 1.3 0.65 3 0.4 60 8 1.5 V V MHz pF µs µs µs Min. Typ. Max. 10 1 Units µA mA V hFE Classification Classification hFE O 60 ~ 120 Y 100 ~ 200 G 1 |
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Fairchild Semiconductor |
DUAL CHANNEL PHOTOTRANSISTOR • Dual Channel Optocoupler • Convenient Plastic SOIC-8 Surface Mountable Package Style • Two channels in one compact surface mount package • Closely Matched Current Transfer Ratios to Minimize Unit-to-Unit Variation • Minimum V(BR)CEO of 70 Volts Gua |
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Fairchild Semiconductor |
N-Channel MOSFET • r DS(ON) = 17mΩ (Typ.), VGS = 10V, ID = 45A • Qg(tot) = 15nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82547 Applications • M |
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Fairchild Semiconductor |
Green Mode Fairchild Power Switch Green Mode Fairchild Power Switch (FPSTM) • Single Chip 700V Sense FET Power Switch • Precision Fixed Operating Frequency (134kHz) • Advanced Burst-Mode operation Consumes under 0.1W at 265Vac and no load (FSD210 only) • Internal Start-up Switch an |
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Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET • • • • • • • • 17.2A, 60V, RDS(on) = 0.06Ω @ VGS = 10V Low gate charge ( typical 9.5 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating Low level gate drive requirem |
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Fairchild Semiconductor |
Green Mode Fairchild Power Switch • Single Chip 700V Sense FET Power Switch for 7DIP • Precision Fixed Operating Frequency (134KHz) • FSD210B Consumes Under 0.1W at 265VAC & No Load with Advanced Burst-Mode Operation • Internal Start-up Circuit • Pulse-by-Pulse Current Limiting • Ove |
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Fairchild Semiconductor |
PLASTIC SILICON PHOTODIODE ■ PIN photodiode ■ Package type: T-1 3/4 (5mm lens diameter) ■ Wide reception angle, 40° ■ Package material and color: clear epoxy Package Dimensions 0.195 (4.95) ■ High sensitivity ■ Peak sensitivity λ = 880nm ■ Radiant sensitive area: 1.245mm x 1. |
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Fairchild Semiconductor |
Dual P-CHANNEL POWER MOSFET ! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1, G2 SSD2011A 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1 D2 P |
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Fairchild Semiconductor |
60V N-Channel MOSFET • • • • • • • 16.8A, 60V, RDS(on) = 0.063Ω @ VGS = 10V Low gate charge ( typical 11.5 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating D D ! " G! G S ! " " " D- |
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Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET • • • • • • • • 17.2A, 60V, RDS(on) = 0.06Ω @ VGS = 10V Low gate charge ( typical 9.5 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating Low level gate drive requirem |
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Fairchild Semiconductor |
Low Frequency Power Amplifier Typ. Max. 100 10 320 1 1 V V MHz Units V µA µA hFE Classification Classification hFE1 Y 100 ~ 200 G 150 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD2012 Typical Characteristics 4 Ic[A], COLLECTOR CURRENT 3 hFE |
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Fairchild Semiconductor |
Two-Port SDIO Mux/Demux Level-Shifting Voltage Translator Bi-Directional Interface between Two Levels: 1.65 to 3.6V Fully Configurable: Inputs and Outputs Track VDD Flexible and Programmable VDD of B and C Ports Non-Preferential Power-up; either VDD Can Power Up First Output Remain |
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Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET ! Lower RDS(on) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1 ,G2 ▼ ▼ SSD2025 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1,D2 |
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Fairchild Semiconductor |
Dual P-Channel Power MOSFET ! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1, G2 SSD2019A 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1 D2 P |
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Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET ! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1 ,G2 SSD2009A 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1,D2 D |
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Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET ! Extremely Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Rugged Polysilicon Gate Cell Structure ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1 ,G2 SSD2007A 8 SOP S1 G1 S2 G |
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Desde 2024. D4U Semiconductor.
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