FQD20N06 |
Part Number | FQD20N06 |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • • 16.8A, 60V, RDS(on) = 0.063Ω @ VGS = 10V Low gate charge ( typical 11.5 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD20N06 / FQU20N06 60 16.8 10.6 67.2 ± 25 (Note 2) (Note 1) (Note 1) ... |
Document |
FQD20N06 Data Sheet
PDF 660.63KB |
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