| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET • rDS(ON) = 92mΩ (Typ.), VGS = 5V, ID = 10A • Qg(tot) = 4.2nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 83524 Applications • Mot |
|
|
|
|
Fairchild Semiconductor |
200V N-Channel MOSFET • 7.8 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 40.5 pF) • 100% Avalanche Tested November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semi |
|
|
|
|
Fairchild Semiconductor |
200V N-Channel MOSFET + < 6 < !$ : + 2-)374 2-0**74 : )** '( 89 .* 8 ±.* + % % % + |
|
|
|
|
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET + < 6 < !$ : + 2-)374 2-0**74 : )** '( 89 .* 8 ±.* + % % % + |
|
|
|
|
Fairchild Semiconductor |
MOSFET • rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 • RoHS Compliant Formerly developmental type 82560 |
|
|
|
|
Fairchild Semiconductor |
Combo Fairchild Power Switch Combo Fairchild Power Switch (FPSTM) Description FSD1000 is a Fairchild Power Switch (FPS) that is specially designed for SMPS of personal computer. This device is a high voltage power SenseFET combined with two PWM controllers in a single monolithi |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • r DS(ON) = 9.4mΩ (Typ.), V GS = 10V, ID = 50A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82560 Applications • |
|
|
|
|
Fairchild Semiconductor |
MOSFET • RDS(on) = 300 mΩ (Typ.) @ VGS = 10 V, ID = 3.8 A • Low Gate Charge (Typ. 12 nC) • Low Crss (Typ. 11 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • Lighting • Uninterruptible Power S |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 7.6 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.8 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 14 pF) • 100% Avalanche Tested • Low Level Gate Drive Requirements Allowing Direct Operation Form Logic Drivers G S D D-PAK D G Absol |
|
|
|
|
Fairchild Semiconductor |
Audio Power Amplifier DC to DC Converter idth Product Output Capacitance Turn ON Time Fall Time Storage Time Test Condition IC = 5mA, IE = 0 IC = 10mA, RBE =∞ IE = 5mA, IC = 0 VCB = 80V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 6A IC = 5A, IB = 0.5A VCE = 5V, IC = 1A VCE = |
|
|
|
|
Fairchild Semiconductor |
Ultrafast Diode Description • Ultrafast Recovery, Trr = 20.8 ns (@ IF = 10 A) • Max Forward Voltage, VF = 1.15 V (@ TC = 25°C) The FFD10UP20S is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewhe |
|
|
|
|
Fairchild Semiconductor |
POWER RECTIFIER * High Voltage and High Reliability * High Speed Switching (Trr=135ns) * Low VF in Turn on (VF=1.3V at IF=10A) * Suitable for Damper Diode in Horizontal Deflection Circuits POWER RECTIFIER TO-220F 1 2 MECHANICAL CHARACTERISTICS * Case: Epoxi, Mold |
|
|
|
|
Fairchild Semiconductor |
Low Voltage Dual Supply 6-Bit SD Interface Voltage Translator ■ Bi-directional interface between two levels from 1.1V ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ General Description The FXL2SD106 is a configurable dual-voltage-supply translator designed for both uni-directional and bidirectional voltage translation between two logi |
|
|
|
|
Fairchild Semiconductor |
Audio Frequency Amplifier 70mA VCB=6V, IE=0, f=1MHz VCE=6V, IC=10mA 50 120 35 600 200 140 640 0.2 0.95 13 170 Min. Typ. Max. 100 100 400 700 0.4 1.2 25 mV V V pF MHz Units nA nA * Pulse Test: PW≤350µs, Duty Cycle≤ 2% hFE1 Classification Classification hFE1 Y 120 ~ 240 G 200 |
|
|
|
|
Fairchild Semiconductor |
Audio Frequency Power Amplifier V, IC=100mA IC=1A, IB=0.1A IC=1A, IB=0.1A VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz 130 16 70 Min. 40 30 5 0.1 400 0.5 1.2 V V MHz pF Typ. Max. Units V V V µA hFE Classification Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2001 Fairchild Semic |
|
|
|
|
Fairchild Semiconductor |
DOUBLE HETEROJUNCTION AIGaAs HIGH INTENSITY RED LED LAMPS |
|
|
|
|
Fairchild Semiconductor |
DOUBLE HETEROJUNCTION AIGaAs HIGH INTENSITY RED LED LAMPS • Wide Viewing Angle • Deep Red Color Red Red Red Red Diffused Clear with Standoff Diffused Clear PACKAGE DIMENSIONS .135 (3.15) .122 (3.1) .047 (1.2) .032 (.8) DESCRIPTION .189 (4.8) .165 (4.2) (ANODE) .059 (1.5) .032 (0.8) 1.040 (26.4) MIN |
|
|
|
|
Fairchild Semiconductor |
SDS10U150S * High Voltage and High Reliability * High Speed Switching (Trr=120nS) * Low VF in Turn on (VF=1.4V at IF=10A) * Suitable for Damper Diode in Horizontal Deflection Circuits MECHANICAL CHARACTERISTICS * Case: Epoxi, Molded * Easy to Mount on Circuit B |
|
Desde 2024. D4U Semiconductor.
|