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FQD10N20L |
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| Part Number | FQD10N20L |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
| Features |
• 7.6 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.8 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 14 pF) • 100% Avalanche Tested • Low Level Gate Drive Requirements Allowing Direct Operation Form Logic Drivers G S D D-PAK D G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Re... |
| Document |
 FQD10N20L Data Sheet
PDF 813.16KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | FQD10N20 |
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200V N-Channel MOSFET |
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| 2 | FQD10N20 |
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| 3 | FQD10N20C |
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| 4 | FQD11P06 |
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| 5 | FQD12N06 |
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| 6 | FQD12N20 |
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Desde 2024. D4U Semiconductor.
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