Fairchild Semiconductor BUT Hoja de datos

No.	parte #	Fabricante	Descripción	Hoja de Datos
1	BUT11F	Fairchild Semiconductor	NPN Silicon Transistor 1AF tON tSTG tF Turn On Time Storage Time Fall Time * Pulsed: pulsed duration = 300µs, duty cycle = 1.5% VCE = 850V, VBE = 0 VCE = 1000V, VBE = 0 VBE = 9V, IC = 0 IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A VCC
2	BUT11AF	Fairchild Semiconductor	NPN Silicon Transistor 1AF tON tSTG tF Turn On Time Storage Time Fall Time * Pulsed: pulsed duration = 300µs, duty cycle = 1.5% VCE = 850V, VBE = 0 VCE = 1000V, VBE = 0 VBE = 9V, IC = 0 IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A VCC