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BUT11AF |
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| Part Number | BUT11AF |
| Manufacturer | Fairchild Semiconductor |
| Description | BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications NPN Silicon Transistor 1 TO-220F 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Par... |
| Features |
1AF
tON tSTG tF
Turn On Time Storage Time Fall Time
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
VCE = 850V, VBE = 0 VCE = 1000V, VBE = 0 VBE = 9V, IC = 0
IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A
IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A VCC = 250V, IC = 2.5A IB1 = -IB2 = 0.5A RL = 100Ω
Min. Typ. Max. Units
400 V 450 V
1 mA 1 mA 10 mA
1.5 V 1.5 V
1.3 V 1.3 V
1 µs 4 µs 0.8 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC
Thermal Resistance, Junction to Case
Typ
Max 3.125
Units °C/W
©2001 Fairchild Semiconductor Corporation
Rev. A2, August 2001
... |
| Document |
 BUT11AF Data Sheet
PDF 72.15KB |
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