Fairchild Semiconductor BAS Hoja de datos

No.	parte #	Fabricante	Descripción
1	BAS29	Fairchild Semiconductor	Small Signal Diode ymbol VR VF* Parameter Breakdown Voltage Forward Voltage Test Conditions IR = 1.0 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA IF = 400 mA VR = 90 V VR = 90 V, TA = 150°C VR = 0, f = 1.0 MHz IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 Ω Min 120 M
2	BAS16	Fairchild Semiconductor	High Conductance Ultra Fast Diode 85 200 1.0 2.0 V mA A TSTG TJ Storage Temperature Range Operating Junction Temperature -55 to +150 -55 to +150 °C °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semic
3	BAS31	Fairchild Semiconductor	High Voltage General Purpose Diode TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max BAS31 350 2.8 357 Units mW mW/ °C °C/W ©1997 Fairchild Semiconductor Corporation BAS31 High Voltage General P
4	BAS16HT1G	Fairchild Semiconductor	Small Signal Diode
5	BAS20	Fairchild Semiconductor	General Purpose High Voltage Diode TA=25°C unless otherwise noted Symbol Parameter Test Conditions VR Breakdown Voltage VF Forward Voltage IR Reverse Leakage CT Total Capacitance trr Reverse Recovery Time IR = 100mA IF = 100mA IF = 200mA VR =50V VR =50V, TA = 150°C VR = 0V, f =
6	BAS35	Fairchild Semiconductor	Small Signal Diode mbol VR VF Parameter Breakdown Voltage Forward Voltage Test Conditions IR = 1.0 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA IF = 400 mA VR = 90 V VR = 90 V, TA = 150°C VR = 0, f = 1.0 MHz IF = IR = 10 mA, IRR = 1.0 mA, RL = 100 Ω Min 120 Max
7	BAS21	Fairchild Semiconductor	General-Purpose High Voltage Diode
8	BAS19	Fairchild Semiconductor	Small Signal Diode ature -55 to +150 -55 to +150 °C °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle oper
9	BAS70SV	Fairchild Semiconductor	70V Dual Schottky Barrier Diodes • Low Forward-Voltage Drop • Low Capacitance • Low Leakage Current • Fast Switching • Ultra-Small Surface-Mount Package • Lead Free by Design / RoHS Compliant • Green Compound • 0.6mm Maximum Package Height C1 A2 (Pin1) SOT-563F BAS70SV Marking :
10	MOC119	Fairchild Semiconductor	PHOTODARLINGTON OPTOCOUPLERS (NO BASE CONNECTION) • High current transfer ratio of 300% 1 • No base connection for improved noise immunity • Underwriters Laboratory (UL) recognized File# E90700 0.350 (8.89) 0.330 (8.38) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.115 (2.92) 0.154 (3.90) 0.100 (2.54)