Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
BAS35 |
| Part Number | BAS35 |
| Manufacturer | NXP |
| Title | General purpose controlled avalanche double diodes |
| Description | PIN BAS29 BAS31 BAS35 1 anode anode cathode (k1) 2 not connected cathode cathode (k2) 3 cathode common connection common anode APPLICATIONS • General purpose switching in e.g. surface mounted circuits. handbook, halfpa2ge 1 2 1 DESCRIPTION General purpose switching diodes fabricated. |
| Features |
• Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 90 V • Repetitive peak reverse voltage: max. 110 V • Repetitive peak forward current: max. 600 mA • Repetitive peak reverse current: max. 600 mA. PINNING DESCRIPTION PIN BAS29 BAS31 BAS35 1 anode anode cathode (k1) 2 not connected cathode cathode (k2) 3 cathode common con. |
BAS35 |
| Part Number | BAS35 |
| Manufacturer | Fairchild Semiconductor |
| Title | Small Signal Diode |
| Description | BAS35 BAS35 Connection Diagram 3 3 3 2 1 L22 1 2 1 2 SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol VRRM IF(AV) IFSM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width. |
| Features | mbol VR VF Parameter Breakdown Voltage Forward Voltage Test Conditions IR = 1.0 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA IF = 400 mA VR = 90 V VR = 90 V, TA = 150°C VR = 0, f = 1.0 MHz IF = IR = 10 mA, IRR = 1.0 mA, RL = 100 Ω Min 120 Max 750 840 900 1.0 1.25 100 100 35 50 Units V mV mV mV V V nA µA pF ns IR CT trr Reverse Current Total Capacitance Reverse Recovery Time 2001 Fairc. |
BAS35 |
| Part Number | BAS35 |
| Manufacturer | SEMTECH |
| Title | Silicon Epitaxial Planar Switching Diodes |
| Description | BAS29, BAS31, BAS35 Silicon Epitaxial Planar Switching Diodes BAS29 3 BAS31 3 BAS35 3 12 12 12 BAS29 Marking Code: L20 BAS31 Marking Code: L21 BAS35 Marking Code: L22 SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Maximum Average Forwa. |
| Features | . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BAS3005A |
Infineon Technologies |
Low VF Schottky Diode |
|
| 2 | BAS3005A-02V |
Infineon |
Low VF Schottky Diode |
|
| 3 | BAS3005B |
Infineon Technologies |
Medium Power AF Schottky Diode |
|
| 4 | BAS3005B-02LRH |
Infineon |
Medium Power AF Schottky Diode |
|
| 5 | BAS3005B-02V |
Infineon |
Medium Power AF Schottky Diode |
|
| 6 | BAS3007A |
Infineon Technologies |
Low VF Schottky Diode Array |
|
| 7 | BAS3010A |
Infineon Technologies |
Medium Power AF Schottky Diode |
|
| 8 | BAS3010A-03W |
Infineon |
Medium Power AF Schottky Diode |
|
| 9 | BAS3010B |
Infineon Technologies |
Medium Power AF Schottky Diode |
|
| 10 | BAS3010B-03W |
Infineon |
Medium Power AF Schottky Diode |
|
Desde 2024. D4U Semiconductor.
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