| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
FQI9N50C • • • • • • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 24 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " ! S |
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Fairchild Semiconductor |
500V N-Channel MOSFET • 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ. 24 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Dra |
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Fairchild Semiconductor |
500V N-Channel MOSFET 2,3(95 2,0))95 : ()) %& &0 .4 ±.) * ' ' ' * = ' = *8 @ @89 9 9 ; * : '! < '! |
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Fairchild Semiconductor |
500V N-Channel MOSFET 1,&(73 1,/))73 : ()) %& 89 &; ±-) * ' ' ' * > ' > *6 @ @67 7 7 < * : '! = |
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Fairchild Semiconductor |
500V N-Channel MOSFET 0+1%73 0+.((73 9 %(( %& &8 1. ±&( ) ' ' ' ) = ' = )6 ? ?67 7 7 : ) 9 '! ; |
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Fairchild Semiconductor |
500V N-Channel MOSFET ) 1+2(84 1+/&&84 9 (&& %& (, -: ±-& ) ' ' ' ) = ' = )7 A A A78 8 8 ; |
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Fairchild Semiconductor |
500V N-Channel MOSFET ) 1+2(84 1+/&&84 9 (&& %& (, -: ±-& ) ' ' ' ) = ' = )7 A A A78 8 8 ; |
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Fairchild Semiconductor |
500V N-Channel MOSFET 1+2(84 1+/&&84 9 (&& %& (, -: ±-& ) ' ' ' ) = ' = )7 @ @78 8 8 ; ) 9 '! < '! |
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Fairchild Semiconductor |
500V N-Channel MOSFET • 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ. 24 pF) • 100% Avalanche Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Dr |
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Fairchild Semiconductor |
500v N CHANNEL MOSFET ) 1+2(84 1+/&&84 9 (&& %& (, -: ±-& ) ' ' ' ) = ' = )7 A A A78 8 8 ; |
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Fairchild Semiconductor |
N-Channel MOSFET • 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ. 24 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s propri |
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Fairchild Semiconductor |
N-Channel MOSFET • • • • • • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 24 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D Swww.DataSheet4U.com FQI Series |
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Fairchild Semiconductor |
N-Channel MOSFET • 9A, 500V, RDS(on) = 0.85 Ω @VGS = 10 V • Low gate charge ( typical 28nC) • Low Crss ( typical 24pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistor |
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Fairchild Semiconductor |
500V N-Channel MOSFET This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superi |
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Desde 2024. D4U Semiconductor.
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