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FQI9N50C |
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| Part Number | FQI9N50C |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 24 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D Swww.DataSheet4U.com FQI Series G! ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB9N50C/FQI9N50C 500 9 5.4 36 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A ... |
| Document |
 FQI9N50C Data Sheet
PDF 635.46KB |
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Desde 2024. D4U Semiconductor.
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