| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Ultra Low Gate Charge (Typ.Qg = 17.8nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant SupreMOSTM February 2010 Description The SupreMOS MOSFET, Fairchild’s next gener |
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Fairchild Semiconductor |
NPT IGBT • High Speed Switching • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode Applications • UPS, Welder March 2014 General Description Using Fairchild's proprietary trench design and advanced NP |
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Fairchild Semiconductor |
Field Stop IGBT • High current capability • Low saturation voltage: VCE(sat) =2.3V @ IC = 60A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer t |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ. 23 nC) • Low Crss (Typ. 10 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/ LED/ PDP TV • Lighting • Uninte |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.7 A • Low Gate Charge (Typ. 8.3 nC) • Low Crss (Typ. 3.7 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Imoroved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Unint |
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Fairchild Semiconductor |
60A Field Stop IGBT • Maximum Junction Temperature : TJ = • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A • Fast Switching : EOFF = 7.5 uJ/A • Tighten Parameter Distribution • RoHS Compliant 175oC • Positive Temperature Co-efficien |
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Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150oC • Typ. RDS(on) = 57.5 mΩ • Ultra Low Gate Charge (Typ. Qg = 240 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Descrip |
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Fairchild Semiconductor |
Field Stop IGBT • High current capability • Low saturation voltage: VCE(sat) =2.3V @ IC = 60A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer t |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 1.05 (Typ.) @ VGS = 10 V, ID = 3.25 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 7 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED TV • Lighting • Uninterrup |
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Fairchild Semiconductor |
Ultrafast IGBT • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A • High input impedance • CO-PAK, IGBT with FRD: trr = 75nS (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, servo controls, and power suppl |
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Fairchild Semiconductor |
N-Channel MOSFET • BVDSS > 650 V @ TJ = 150oC • RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A • Ultra Low Gate Charge (Typ. Qg = 45 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED/PD |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.9 A • Low Gate Charge (Typ. 8.3 nC) • Low Crss (Typ. 3.7 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • Consumer Appliances • Lighting • |
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Fairchild Semiconductor |
Field Stop IGBT • Maximum Junction Temperature: TJ = 175oC • Positive Temperaure Co-efficient for easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A • High Input Impedance • Fast Switching: EOFF = 7.5 uJ/A |
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Fairchild Semiconductor |
N-Channel MOSFET • 650V @TJ = 150 C • RDS(on) = 51.5mΩ ( Typ.)@ VGS = 10V, ID =23.5 A • Ultra Low Gate Charge ( Typ.Qg =115nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant o December 2011 TM Description The SupreMOS MOSFET, Fairchild’ |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A • Low Gate Charge (Typ. 48 nC) • Low Crss (Typ. 23 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply • A |
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Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 220 mΩ • Ultra Low Gate Charge (Typ. Qg = 48 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 129 pF) • 100% Avalanche Tested • An Integrated Gate Resistor • RoHS Compliant Applications • LCD / LED / PDP |
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Fairchild Semiconductor |
N-Channel MOSFET • BVDSS > 650 V @ TJ = 150oC • RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A • Ultra Low Gate Charge (Typ. Qg = 45 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF) • 100% Avalanche Tested • RoHS Compliant Application • PDP TV • S |
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Fairchild Semiconductor |
Field-Stop IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 60 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder and PFC March 2015 General Description Using novel field stop IGBT t |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A • Low Gate Charge (Typ. 10 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD / LED / PDP TV • Lighting • Un |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 28 mΩ (Typ.) @ VGS = 10 V, ID = 38 A • Ultra Low Gate Charge (Typ. Qg = 218 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Desc |
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Desde 2024. D4U Semiconductor.
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