| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
FKPF5N80 0 5 0.5 10 2 - 40 ~ 125 - 40 ~ 125 Units A A A A2s A/µs W W V A °C °C V Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns Ta=25°C, AC 1 minute, T1 T2 G terminal to case 1500 Thermal Characteristi |
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Fairchild Semiconductor |
800V N-Channel MOSFET • • • • • • 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series ! |
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Fairchild Semiconductor |
FQP5N80 • 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V • Low gate charge ( typical 25 nC) • Low Crss ( typical 11 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability GDS TO-220 FQP Series D ! " 35 G! " " ! S Absolute Maximum Ratings T |
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Fairchild Semiconductor |
800V N-Channel MOSFET • • • • • • 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series ! |
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Fairchild Semiconductor |
800V N-Channel MOSFET • • • • • • 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS 3 5 " " TO-220 FQP Series ! S Absolute Maximum Ratings Sy |
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Fairchild Semiconductor |
Bi-Directional Triode Thyristor Planar Silicon 0 5 0.5 10 2 - 40 ~ 125 - 40 ~ 125 Units A A A A2s A/µs W W V A °C °C V Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns Ta=25°C, AC 1 minute, T1 T2 G terminal to case 1500 Thermal Characteristi |
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Fairchild Semiconductor |
800V N-Channel MOSFET • • • • • • 2.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S 3 " " 5 TO-220F FQPF Series ! S Absolute Maximum Ratin |
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Fairchild Semiconductor |
Advanced Power MOSFET |
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Desde 2024. D4U Semiconductor.
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