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P5N80 |
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| Part Number | P5N80 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V • Low gate charge ( typical 25 nC) • Low Crss ( typical 11 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability GDS TO-220 FQP Series D ! " 35 G! " " ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Not... |
| Document |
 P5N80 Data Sheet
PDF 659.36KB |
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