Fairchild Semiconductor 45N Hoja de datos

No.	parte #	Fabricante	Descripción
1	YM3045N	Fairchild Semiconductor	SCHOTTKY BARRIER RECTIFIER • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection 1 TO220 June 2008 1.Anode 3.Anode 2. Cathode Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VRRM VR I
2	FDI045N10A	Fairchild Semiconductor	N-Channel PowerTrench MOSFET • RDS(on) = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Fast Switching Speed • Low Gate Charge, QG = 54 nC (Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description
3	FQD45N03L	Fairchild Semiconductor	N-Channel Logic Level PWM Optimized Power MOSFET low gate charge while maintaining low onresistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0.0
4	SSS45N20B	Fairchild Semiconductor	Straight 1-Row BergStik II Headers • • • • • • 35A, 200V, RDS(on) = 0.065Ω @VGS = 10 V Low gate charge ( typical 133 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maxim
5	FDC645N	Fairchild Semiconductor	N-Channel MOSFET • 5.5 A, 30 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 26 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • Low gate charge (13 nC typical) • High power and current handling capability S D D SuperSOT TM-6 G D D
6	FQB45N15V2	Fairchild Semiconductor	150V N-Channel MOSFET • • • • • • 45A, 150V, RDS(on) = 0.04Ω @VGS = 10 V Low gate charge ( typical 72 nC) Low Crss ( typical 135 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " !
7	MBRA3045N	Fairchild Semiconductor	SCHOTTKY BARRIER RECTIFIER • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes 1 2 3 TO-3P 1. Anode 2.Cathode 3. Anode SCHOTTKY BARRIER RECTIFIER
8	SSF45N20B	Fairchild Semiconductor	200V N-Channel MOSFET • • • • • • 26.4A, 200V, RDS(on) = 0.065Ω @VGS = 10 V Low gate charge ( typical 133 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G D S TO-3PF SSF Series ! S Absolute Maximum Rat
9	FDH45N50F	Fairchild Semiconductor	500V N-Channel MOSFET • RDS(on) = 105 mΩ (Typ.) @ VGS = 10 V, ID = 22.5 A • Low Gate Charge (Typ. 105 nC) • Low Crss (Typ. 62 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Description U
10	FQP45N15V2	Fairchild Semiconductor	150V N-Channel MOSFET • • • • • • 45A, 150V, RDS(on) = 0.04Ω @VGS = 10 V Low gate charge ( typical 72 nC) Low Crss ( typical 135 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP GD S TO-220F FQPF ! S Absolute Ma
11	FQPF45N15V2	Fairchild Semiconductor	150V N-Channel MOSFET • • • • • • 45A, 150V, RDS(on) = 0.04Ω @VGS = 10 V Low gate charge ( typical 72 nC) Low Crss ( typical 135 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP GD S TO-220F FQPF ! S Absolute Ma
12	45N20B	Fairchild Semiconductor	SSP45N20B • • • • • • 35A, 200V, RDS(on) = 0.065Ω @VGS = 10 V Low gate charge ( typical 133 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maxim
13	FD6M045N06	Fairchild Semiconductor	60V/60A Synchronous Rectifier • Very High Rectification Efficiency at Output 12V • Integrated Solution for Saving Board Space • RoHS Compliant Power-SPMTM tm General Description The FD6M045N06 is one product in the Power-SPMTM family that Fairchild has newly developed and desig
14	FDP045N10A	Fairchild Semiconductor	N-Channel PowerTrench MOSFET • RDS(on) = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Fast Switching Speed • Low Gate Charge, QG = 54 nC (Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description
15	FQI45N15V2	Fairchild Semiconductor	150V N-Channel MOSFET • • • • • • 45A, 150V, RDS(on) = 0.04Ω @VGS = 10 V Low gate charge ( typical 72 nC) Low Crss ( typical 135 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " !
16	FDPF045N10A	Fairchild Semiconductor	MOSFET • RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 67 A • Fast Switching Speed • Low Gate Charge, QG = 57 nC(Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description Thi
17	RF1S45N06SM	Fairchild Semiconductor	45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs • 45A, 60V • rDS(ON) = 0.028Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature Description The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM N-Channel power MOSFETs are manufa
18	MBRP2045N	Fairchild Semiconductor	SCHOTTKY BARRIER RECTIFIER • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes 1 2 3 TO-220 1. Anode 2.Cathode 3. Anode SCHOTTKY BARRIER RECTIFIE
19	SSH45N20B	Fairchild Semiconductor	200V N-Channel MOSFET • • • • • • 45A, 200V, RDS(on) = 0.065Ω @VGS = 10 V Low gate charge ( typical 133 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! TO-3P G DS SSH Series ! S Absolute Maximum Rating
20	SSP45N20A	Fairchild Semiconductor	advanced power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSP45N20A BVDSS = 200 V RDS(on) = 0.065 Ω ID = 35 A TO-220 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.)