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Fairchild Semiconductor |
General Purpose Rectifiers • • Low forward voltage drop. High surge current capability. DO-41 COLOR BAND DENOTES CATHODE General Purpose Rectifiers Absolute Maximum Ratings* Symbol VRRM IF(AV) IFSM TA = 25°C unless otherwise noted Parameter 4001 Peak Repetitive Reverse Volt |
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Fairchild Semiconductor |
General Purpose Rectifiers • Low Forward Voltage Drop • High Surge Current Capability Ordering Information Part Number 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Top Mark 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 DO-41 COLOR BAND DENOTES CATHODE Package DO-204 |
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Fairchild Semiconductor |
400V N-Channel MOSFET /+,&&81 9 : ) 9 '! ; '! *!'! ; 9 = * !!5 9 /+6781 |
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Fairchild Semiconductor |
Quad 2-Input NAND Gate to +150°C Note 1: The “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. The device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables a |
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Fairchild Semiconductor |
General Purpose Rectifiers • Low Forward Voltage Drop • High Surge Current Capability Ordering Information Part Number 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Top Mark 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 DO-41 COLOR BAND DENOTES CATHODE Package DO-204 |
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Fairchild Semiconductor |
20A/ 400V/ 0.216 Ohm/ N-Channel SMPS Power MOSFET • Low Gate Charge Requirement Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Ju |
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Fairchild Semiconductor |
400V N-Channel MOSFET /,%))72 8 ()) %% & 16 (1 ±:) * ' ' ' * < ' < *5 ? ?57 7 7 9 * 8 '! ; '! + |
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Fairchild Semiconductor |
400V N-Channel MOSFET • • • • • • 4.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G! G S D-PAK IRFR Series I-PAK G D S IRFU Series ! S |
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Fairchild Semiconductor |
8A/ 400V - 600V Ultrafast Diodes • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <60ns • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V • Avalanche Energy Ra |
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Fairchild Semiconductor |
Fast Rectifiers • Low Forward Voltage Drop • High Surge Current Capability • High Reliability • High Current Capability • Glass-Passivated Junction DO-41 (Plastic) COLOR BAND DENOTES CATHODE Ordering Information Part Number UF4001 UF4002 UF4003 UF4004 UF4005 UF400 |
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Fairchild Semiconductor |
Low-Power Green-Mode PWM Flyback Power Controller Linearly decreasing PWM frequency Green-mode under light-load and zero-load conditions Constant voltage (CV) and constant current (CC) No secondary feedback Low start-up current (8µA) Low operating current (3.6mA) Leading-edge blanking |
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Fairchild Semiconductor |
PWM Flyback Power Controller Linearly Decreasing PWM Frequency Green Mode Under Light-Load and Zero-Load Conditions Circuitry Description This highly integrated PWM controller provides several features to enhance the performance of low-power flyback converters. To minimize |
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Fairchild Semiconductor |
(HLMP-2xxx) LED LIGHT BARS nt of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com © 2000 Fairchild Semiconductor Corp |
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Fairchild Semiconductor |
NPN General Purpose Amplifier 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4400 625 5.0 83.3 200 Max *MMBT4400 350 2.8 357 Units mW mW/ °C °C/W °C/W © 1997 |
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Fairchild Semiconductor |
1500W Transient Voltage Suppressors • Glass-Passivated Junction • 1500 W Peak Pulse Power Capability at 1.0 ms • Excellent Clamping Capability • Low Incremental Surge Resistance • Fast Response Time; Typically < 1.0 ps from 0 V to BV for Uni-directional, 5.0 ns for Bidirectional • Typi |
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Fairchild Semiconductor |
400V P-Channel MOSFET • • • • • • -2.7A, -400V, RDS(on) = 3.1Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! ! ● ● ▶ ▲ ● G S D-PAK FQD Series I-PAK G D S FQU Series ! D |
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Fairchild Semiconductor |
400V N-Channel MOSFET • 3.0 A, 400 V, RDS(on) = 1.6 Ω (Max.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 10 nC) • Low Crss (Typ. 7 pF) • 100% Avalanche Tested D GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EA |
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Fairchild Semiconductor |
400V N-Channel MOSFET • • • • • • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V Low gate charge ( typical 16nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D-PAK FQD Series I-PAK G D S FQU Series G! ! S |
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Fairchild Semiconductor |
15A/ 400V - 600V Ultrafast Dual Diodes • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <55ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . . . 600V • Avalanche Energy Rated |
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Fairchild Semiconductor |
15A/ 400V - 600V Ultrafast Diodes • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <55ns • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC • Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . . .600V • Avalanche Energy Rated • |
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Desde 2024. D4U Semiconductor.
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