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IRFU330B |
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| Part Number | IRFU330B |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o... |
| Features |
• • • • • • 4.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G! G S D-PAK IRFR Series I-PAK G D S IRFU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRFR330B / IRFU330B 400 4.5 2.9 18 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °... |
| Document |
 IRFU330B Data Sheet
PDF 671.72KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFU3303 |
International Rectifier |
HEXFET Power MOSFET |
|
| 2 | IRFU3303PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 3 | IRFU330A |
Samsung |
Power MOSFET |
|
| 4 | IRFU310 |
International Rectifier |
Power MOSFET |
|
| 5 | IRFU310 |
Vishay Siliconix |
Power MOSFET |
|
| 6 | IRFU310 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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