Fairchild Semiconductor 3N6 Hoja de datos

No.	parte #	Fabricante	Descripción
1	G23N60UFD	Fairchild Semiconductor	SGF23N60UFD • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A • High Input Impedance • CO-PAK, IGBT with FRD : trr = 42ns (typ.) Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls C GC E TTOO--
2	3N60A4	Fairchild Semiconductor	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. This IGBT is
3	FCH043N60	Fairchild Semiconductor	MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 37 mΩ • Ultra Low Gate Charge (Typ. Qg = 163 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 730 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial P
4	FQI3N60	Fairchild Semiconductor	600V N-Channel MOSFET • • • • • • 3.0A, 600V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 10 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series !
5	FCPF13N60NT	Fairchild Semiconductor	N-Channel MOSFET • RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A • Ultra Low Gate Charge ( Typ.Qg = 30.4nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant TM SupreMOS August 2009 Description The SupreMOS MOSFET, Fairchild’s next gene
6	FQP3N60C	Fairchild Semiconductor	N-Channel MOSFET • 3.0 A, 600 V, RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 10.5 nC) • Low Crss (Typ. 5.0 pF) • 100% Avalanche Tested D GD S G TO-220 S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
7	HGT1S3N60A4DS	Fairchild Semiconductor	600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use
8	HGT1S3N60C3D	Fairchild Semiconductor	6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes • 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTP3N60C3D, HGT1S3N60C3D, and H
9	HGT1S3N60C3DS	Fairchild Semiconductor	6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes • 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTP3N60C3D, HGT1S3N60C3D, and H
10	HGTD3N60A4	Fairchild Semiconductor	600V/ SMPS Series N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. This IGBT is
11	HGTD3N60A4S	Fairchild Semiconductor	600V/ SMPS Series N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. This IGBT is
12	HGTP3N60A4D	Fairchild Semiconductor	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use
13	HGTP3N60C3D	Fairchild Semiconductor	N-Channel IGBT • 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTP3N60C3D, HGT1S3N60C3D, and H
14	FQP3N60	Fairchild Semiconductor	600V N-Channel MOSFET • • • • • • 3.0A, 600V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 10 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings
15	SGH23N60UFD	Fairchild Semiconductor	IGBT • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A • High Input Impedance • CO-PAK, IGBT with FRD : trr = 42ns (typ.) Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls C GC E TO-3P
16	SGH23N60UF	Fairchild Semiconductor	IGBT * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=12A) * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast N-CHANNEL IGBT TO-3P C
17	FQB3N60C	Fairchild Semiconductor	600V N-Channel MOSFET • 3A, 600V, RDS(on) = 3.4Ω @ VGS = 10 V • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transist
18	FCP13N60N	Fairchild Semiconductor	N-Channel MOSFET • RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A • Ultra Low Gate Charge ( Typ.Qg = 30.4nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant TM SupreMOS August 2009 Description The SupreMOS MOSFET, Fairchild’s next gene
19	HGTD3N60C3	Fairchild Semiconductor	6A/ 600V/ UFS Series N-Channel IGBTs of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
20	HGTD3N60C3S	Fairchild Semiconductor	6A/ 600V/ UFS Series N-Channel IGBTs of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is