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HGTP3N60A4D |
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| Part Number | HGTP3N60A4D |
| Manufacturer | Fairchild Semiconductor |
| Description | HGT1S3N60A4DS, HGTP3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devi... |
| Features |
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used in anti-parallel is the development type TA49369. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49329... |
| Document |
 HGTP3N60A4D Data Sheet
PDF 113.52KB |
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