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| Part Number | HGTP3N60A4 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | HGTP3N60A4 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel IGBT |
| Description | HGTD3N60A4S, HGTP3N60A4 Data Sheet August 2003 600V, SMPS Series N-Channel IGBT The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-stat. |
| Features | of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optim. |
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|---|---|---|---|---|
| 1 | HGTP3N60A4D |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 2 | HGTP3N60A4D |
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| 3 | HGTP3N60B3 |
Intersil Corporation |
N-Channel IGBT |
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| 4 | HGTP3N60B3D |
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| 5 | HGTP3N60C3 |
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| 6 | HGTP3N60C3D |
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N-Channel IGBT |
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| 7 | HGTP3N60C3D |
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| 8 | HGTP3N60C3D |
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| 9 | HGTP10N120BN |
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| 10 | HGTP10N120BN |
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Desde 2024. D4U Semiconductor.
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