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| Part Number | HGTP3N60C3D |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | HGTP3N60C3D |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel IGBT |
| Description | The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state . |
| Features |
• 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high . |
| Part Number | HGTP3N60C3D |
| Manufacturer | Harris Corporation |
| Title | UFS Series N-Channel IGBT |
| Description | The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state . |
| Features |
• 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high . |
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| 2 | HGTP3N60A4 |
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| 6 | HGTP3N60B3 |
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Desde 2024. D4U Semiconductor.
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