| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
N-Channel MOSFET • • • • • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V Low gate charge ( typical 36.8 nC) Low Crss ( typical 39 pF) Fast switching Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced usin |
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Fairchild Semiconductor |
FQP33N10 • • • • • • • 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-22 |
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Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET • • • • • • • 36A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 70 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching. 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-P |
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Fairchild Semiconductor |
N-Channel MOSFET 5.2 A, 30 V. RDS(ON) = 0.042 Ω @ VGS = 4.5 V RDS(ON) = 0.054 Ω @ VGS = 2.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-res |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 36A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 18A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " " TO-220 |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 94 mΩ (Max.) @ VGS = 10 V, ID = 16.5 A • Low Gate Charge (Typ. 36.8 nC) • Low Crss (Typ. 39 pF) • 100% Avalanche Tested Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply November 2013 Description UniFET |
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Fairchild Semiconductor |
N-Channel MOSFET • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description May 2006 TM These N-Channel enhancement mode power |
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Fairchild Semiconductor |
FDB33N25 • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect trans |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 25.8A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G D S ! " " " TO- |
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Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET • • • • • • • 25.8A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 70 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G D S ! " " " TO- |
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Fairchild Semiconductor |
N-Channel MOSFET • 33 A, 100 V, RDS(on) = 52 mΩ (Max) @VGS = 10 V, ID = 16.5 A • Low Gate Charge (Typ. 30 nC) • Low Crss (Typ. 70 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D D GS D2-PAK G S Absolute Maximum Ratings TC = 25°C unless |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-22 |
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Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET • • • • • • • 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 70 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-220 |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 88 mΩ (Typ.) @ VGS = 10 V, ID =16.5 A • Low Gate Charge (Typ. 36 nC) • Low Crss (Typ. 35 pF) • 100% Avalanche Tested • RoHS Compliant Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply May 2014 Description UniFETTM |
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Fairchild Semiconductor |
N-Channel MOSFET • 20A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description May 2006 TM These N-Channel enhancement mode power |
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Fairchild Semiconductor |
N-Channel MOSFET • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description May 2006 TM These N-Channel enhancement mode power |
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Fairchild Semiconductor |
60V/73A Synchronous Rectifier • Very High Rectification Efficiency at Output 12V • Integrated Solution for Saving Board Space • RoHS Compliant Power-SPMTM tm General Description The FD6M033N06 is one product in the Power-SPMTM family that Fairchild has newly developed and desig |
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Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET • • • • • • • 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 70 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D ! " G S G! ! " " " D2 |
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Desde 2024. D4U Semiconductor.
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