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FDI33N25 |
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| Part Number | FDI33N25 |
| Manufacturer | Fairchild Semiconductor |
| Description | May 2006 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially ... |
| Features |
• 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description May 2006 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient sw... |
| Document |
 FDI33N25 Data Sheet
PDF 870.53KB |
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