| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
IRFR120N • 8.4A, 100V • rDS(ON) = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Sur |
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Fairchild Semiconductor |
20A/ 400V/ 0.216 Ohm/ N-Channel SMPS Power MOSFET • Low Gate Charge Requirement Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Ju |
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Fairchild Semiconductor |
40A 600V UFS Series N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The IGBT is i |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used i |
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Fairchild Semiconductor |
HGTG20N60A4D of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used i |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. This IGBT i |
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Fairchild Semiconductor |
IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A • High Input Impedance • Fast Switching : EOFF = 8 uJ/A • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC General Description Using novel field stop IGBT |
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Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT • 100kHz Operation at 390V, 7A • 200kHZ Operation at 390V, 5A • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . 85ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 30nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . . |
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Fairchild Semiconductor |
20A Field Stop IGBT • High current capability • Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A • High input impedance • Fast switching • Qualified to Automotive Requirements of AEC-Q101 • RoHS complaint Applications • Inverters, SMPS, PFC, UPS • Automotive Chargers, |
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Fairchild Semiconductor |
Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.) BVDSS = 100 V RDS(on) = 0.2 |
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Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT • 100kHz Operation at 390V, 7A • 200kHZ Operation at 390V, 5A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 30nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . |
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Fairchild Semiconductor |
N-Channel Power MOSFET • Low Gate Charge Requirement Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Ju |
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Fairchild Semiconductor |
N-Channel MOSFET • 650V @ TJ = 150°C • Typ. RDS(on) = 150 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) • 100% Avalanche Tested Applications • Solar Inverter • AC-DC Power Supply Description SuperFET® MO |
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Fairchild Semiconductor |
400V N-Channel MOSFET 1-%**73 9 )** %& ' %. 8 :; ±8* + ( ( ( + > ( > +6 @ @67 7 7 < + 9 (! = (! , |
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Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET • • • • • • • • 17.2A, 60V, RDS(on) = 0.06Ω @ VGS = 10V Low gate charge ( typical 9.5 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating Low level gate drive requirem |
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Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET • • • • • • • • 17.2A, 60V, RDS(on) = 0.06Ω @ VGS = 10V Low gate charge ( typical 9.5 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating Low level gate drive requirem |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. RDS(on) = 0.15Ω • Ultra low gate charge (typ. Qg = 75nC) • Low effective output capacitance (typ. Coss.eff = 165pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high volt |
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Fairchild Semiconductor |
N-Channel MOSFET • 650V @ TJ = 150°C • Typ. RDS(on) = 150 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) • 100% Avalanche Tested Applications • Solar Inverter • AC-DC Power Supply Description SuperFET® MO |
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Desde 2024. D4U Semiconductor.
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