| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
900V N-Channel MOSFET • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23pF) Fast switching 100% avalanche tested Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors |
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Fairchild Semiconductor |
Small Signal Diode 4AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) |
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Fairchild Semiconductor |
Small Signal Diode 4AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) |
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Fairchild Semiconductor |
Small Signal Diode 4AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) |
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Fairchild Semiconductor |
Small Signal Diode 4AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) |
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Fairchild Semiconductor |
Small Signal Diode 4AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) |
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Fairchild Semiconductor |
Small Signal Diode 4AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) |
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Fairchild Semiconductor |
Small Signal Diode 4AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) |
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Fairchild Semiconductor |
Zeners 1N967B 1N968B 1N969B 1N970B 1N971B 17.1 19 20.9 22.8 25.652 18 20 22 24 27 18.9 21 23.1 25.2 28.35 7.0 6.2 5.6 5.2 4.6 21 750 0.25 25 750 0.25 29 750 0.25 33 750 0.25 41 750 0.25 1N972B 1N973B 1N974B 1N975B 1N976B 8.5 30 31.5 4.2 31.35 33 |
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Fairchild Semiconductor |
Zeners 1N967B 1N968B 1N969B 1N970B 1N971B 17.1 19 20.9 22.8 25.652 18 20 22 24 27 18.9 21 23.1 25.2 28.35 7.0 6.2 5.6 5.2 4.6 21 750 0.25 25 750 0.25 29 750 0.25 33 750 0.25 41 750 0.25 1N972B 1N973B 1N974B 1N975B 1N976B 8.5 30 31.5 4.2 31.35 33 |
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Fairchild Semiconductor |
Zeners 1N967B 1N968B 1N969B 1N970B 1N971B 17.1 19 20.9 22.8 25.652 18 20 22 24 27 18.9 21 23.1 25.2 28.35 7.0 6.2 5.6 5.2 4.6 21 750 0.25 25 750 0.25 29 750 0.25 33 750 0.25 41 750 0.25 1N972B 1N973B 1N974B 1N975B 1N976B 8.5 30 31.5 4.2 31.35 33 |
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Fairchild Semiconductor |
High Conductance Fast Switching Diode • Fast Switching Diode (Trr <4.0nsec) • Flat Lead, Surface Mount Device Under 0.70mm Height • Extremely Small Outline Plastic Package SOD523F Device Marking Code Device Type Device Marking 1N4148WT E1 1N4448WT E2 1N914BWT E3 • Moisture Level |
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Fairchild Semiconductor |
900V N-Channel MOSFET • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A • Low Gate Charge (Typ. 72 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Se |
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Fairchild Semiconductor |
900V N-Channel MOSFET • • • • • • 7.2A, 900V, RDS(on) = 0.96 Ω @ VGS = 10 V Low gate charge ( typical 72 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Rati |
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Fairchild Semiconductor |
MOSFET • 7.0 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 3.5 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ. 23 pF) • 100% Avalanche Tested D G D S TO-3PF Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS |
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Fairchild Semiconductor |
900V N-Channel MOSFET • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23pF) Fast switching 100% avalanche tested Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors |
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Fairchild Semiconductor |
Zeners 1N967B 1N968B 1N969B 1N970B 1N971B 17.1 19 20.9 22.8 25.652 18 20 22 24 27 18.9 21 23.1 25.2 28.35 7.0 6.2 5.6 5.2 4.6 21 750 0.25 25 750 0.25 29 750 0.25 33 750 0.25 41 750 0.25 1N972B 1N973B 1N974B 1N975B 1N976B 8.5 30 31.5 4.2 31.35 33 |
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Fairchild Semiconductor |
Zeners 1N967B 1N968B 1N969B 1N970B 1N971B 17.1 19 20.9 22.8 25.652 18 20 22 24 27 18.9 21 23.1 25.2 28.35 7.0 6.2 5.6 5.2 4.6 21 750 0.25 25 750 0.25 29 750 0.25 33 750 0.25 41 750 0.25 1N972B 1N973B 1N974B 1N975B 1N976B 8.5 30 31.5 4.2 31.35 33 |
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Fairchild Semiconductor |
N-Channel QFET MOSFET • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A • Low Gate Charge (Typ. 72 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested • RoHS compliant June 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fa |
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Fairchild Semiconductor |
Zeners 1N967B 1N968B 1N969B 1N970B 1N971B 17.1 19 20.9 22.8 25.652 18 20 22 24 27 18.9 21 23.1 25.2 28.35 7.0 6.2 5.6 5.2 4.6 21 750 0.25 25 750 0.25 29 750 0.25 33 750 0.25 41 750 0.25 1N972B 1N973B 1N974B 1N975B 1N976B 8.5 30 31.5 4.2 31.35 33 |
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Desde 2024. D4U Semiconductor.
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