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FQA11N90_F109 |
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| Part Number | FQA11N90_F109 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
| Features |
• 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A • Low Gate Charge (Typ. 72 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested • RoHS compliant June 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and el... |
| Document |
 FQA11N90_F109 Data Sheet
PDF 0.96MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQA11N90-F109 |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | FQA11N90C |
Fairchild Semiconductor |
900V N-Channel MOSFET |
|
| 3 | FQA11N90C-F109 |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FQA11N90C_F109 |
Fairchild Semiconductor |
MOSFET |
|
| 5 | FQA11N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET |
|
| 6 | FQA11N90 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
Desde 2024. D4U Semiconductor.
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