| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
N-Channel MOSFET • 650V @Tj = 150°C • Typ. Rds(on)=0.32Ω • Ultra low gate charge (typ. Qg=40nC) • Low effective output capacitance (typ. Coss.eff=95pF) • 100% avalanche tested • RoHS Compliant D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unle |
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Fairchild Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 36 mΩ • Ultra Low Gate Charge (Typ. Qg = 277 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF) • 100% Avalanche Tested • RoHS Compliant Description SuperFET® II MOSFET is Fairchild Semiconductor’ |
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Fairchild Semiconductor |
MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 36 mΩ • Ultra Low Gate Charge (Typ. Qg = 226 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 1278 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV • Telecom / Server Power |
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Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 36 mΩ • Ultra Low Gate Charge (Typ. Qg = 285 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 735 pF) • 100% Avalanche Tested • An Integrated Gate Resistor • RoHS Compliant Applications • LCD / LED / PDP |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 1.0A, 600V, RDS(on) = 11.5Ω @VGS = 10 V Low gate charge ( typical 5.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D-PAK FQD Series I-PAK G D S FQU Series G! ! " " " ! |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns) • Ultra Low Gate Charge (typ. Qg = 40nC) • Low Effective Output Capacitance (typ. Cosseff.=95pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprie |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.5 A • Low Gate Charge (Typ. 4.8 nC) • Low Crss (Typ. 3.5 pF) • 100% Avalanche Tested • RoHS Compliant D G S D-PAK G D S I-PAK G! D ! ● ◀▲ ● ● ! S Absolute Maximum Ratings TC = 25°C unle |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ.) SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω |
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Fairchild Semiconductor |
SSW1N60A Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ |
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Fairchild Semiconductor |
SuperFET • • • • • • 650V @ Tj = 150°C Typ. Rds(on) = 0.32Ω Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff = 95pF) 100% avalanche tested RoHS Compliant D { ● ◀ G D S TO-220AB FCP Series G{ GD S ▲ ● ● TO-220F FCPF |
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Fairchild Semiconductor |
Zener Diodes |
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Fairchild Semiconductor |
Zener Diodes |
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Fairchild Semiconductor |
Zener Diodes |
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Fairchild Semiconductor |
Zener Diodes |
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Fairchild Semiconductor |
Zener Diodes |
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Fairchild Semiconductor |
Zener Diodes |
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Fairchild Semiconductor |
GaAs INFRARED EMITTING DIODE • Good optical to mechanical alignment • Mechanically and wavelength matched to the TO-18 series phototransistor • Hermetically sealed package 0.030 (0.76) NOM 0.255 (6.48) • High irradiance level • (*) Indicates JEDEC registered values 1.00 (25. |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns) • Ultra Low Gate Charge (typ. Qg = 40nC) • Low Effective Output Capacitance (typ. Cosseff.=95pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprie |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 1.0A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D2-PAK SSW Series G D S I2-PAK SSI Series G! |
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Desde 2024. D4U Semiconductor.
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