FQD1N60C |
Part Number | FQD1N60C |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to... |
Features |
• 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.5 A • Low Gate Charge (Typ. 4.8 nC) • Low Crss (Typ. 3.5 pF) • 100% Avalanche Tested • RoHS Compliant D G S D-PAK G D S I-PAK G! D ! ● ◀▲ ● ● ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Dio... |
Document |
FQD1N60C Data Sheet
PDF 797.89KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQD1N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
2 | FQD1N60 |
OuCan |
1.3A N-Channel MOSFET | |
3 | FQD1N60C |
HAOHAI |
N-Channel MOSFET | |
4 | FQD1N60C |
ON Semiconductor |
N-Channel MOSFET | |
5 | FQD1N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
6 | FQD1N50B |
Fairchild Semiconductor |
500V N-Channel MOSFET |