| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
500V N-Channel MOSFET • 550V @TJ = 150°C • Typ. RDS(on) = 0.265Ω @VGS = 10 V • Low gate charge (typical 42 nC) • Low Crss (typical 11 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply Description UniFETTM MOSFET is Fairchild Semicond |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 265 mΩ (Max.) @ VGS = 10 V, ID = 9.5 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply June 2014 Description UniFETTM MOSFET is Fair |
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Fairchild Semiconductor |
500V N-Channel MOSFET • 550V @TJ = 150°C • Typ. RDS(on) = 0.265Ω @VGS = 10 V • Low gate charge (typical 42 nC) • Low Crss (typical 11 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect |
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Fairchild Semiconductor |
N-Channel UniFETTM FRFET MOSFET • RDS(on) = 120 mΩ (Typ.) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 24 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD/LED TV • Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power S |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies wh |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply Description UniFETTM MOSFET is Fairchild Semicond |
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Fairchild Semiconductor |
HGTG18N120BN of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies wh |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies whe |
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Fairchild Semiconductor |
500V N-Channel MOSFET • • • • • • 20A, 500V, RDS(on) = 0.265Ω @VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! ! " " " TO-3P G DS FQA Series TC = 25°C unless otherwise noted |
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Fairchild Semiconductor |
200V N-Channel MOSFET • • • • • • 15A, 200V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Ab |
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Fairchild Semiconductor |
500V N-Channel MOSFET • • • • • • 20A, 500V, RDS(on) = 0.265Ω @VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-247 FQH Series ! S Absolute Maximum Ratings |
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Fairchild Semiconductor |
200V N-Channel MOSFET • • • • • • 18A, 200V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S |
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Fairchild Semiconductor |
500V N-Channel MOSFET • • • • • • 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S |
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Fairchild Semiconductor |
500V N-Channel MOSFET • • • • • • 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply Description UniFETTM MOSFET is Fairchild Semicond |
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Fairchild Semiconductor |
HGTG18N120BN of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies wh |
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Fairchild Semiconductor |
N-Channel UniFET MOSFET • 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V • Low gate charge ( typical 45 nC) • Low Crss ( typical 25 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect |
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Fairchild Semiconductor |
N-Channel MOSFET N-Channel UniFETTM MOSFET 200 V, 16 A, 125 mΩ Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide bette |
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Fairchild Semiconductor |
N-Channel UniFETTM FRFET MOSFET • RDS(on) = 120 mΩ (Typ.) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 24 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD/LED TV • Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power S |
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Desde 2024. D4U Semiconductor.
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