| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A • RDS(on) = 175 m (Typ.) @ VGS = 5 V, ID = 2.1 A • Low Gate Charge (Typ.2.78 nC) • Low Crss (Typ. 2.04 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Desc |
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Fairchild Semiconductor |
16K-Bit SPI Interface Serial CMOS EEPROM I Sequential read of entire array I 16 byte "Page write" mode to minimize total write time per byte I /WP pin and BLOCK WRITE protection to prevent inadvertent programming as well as programming ENABLE and DISABLE opcodes. I /HOLD pin to suspend data |
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Fairchild Semiconductor |
Ultrafast IGBT • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A • High input impedance • CO-PAK, IGBT with FRD: trr = 75nS (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, servo controls, and power suppl |
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Fairchild Semiconductor |
600 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 600 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV minimum for Unidirectional and |
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Fairchild Semiconductor |
N-Channel MOSFET Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A Typ Qg(10) = 187nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant Applications 12V Automotive Load |
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Fairchild Semiconductor |
Logic Gate Optocoupler ■ Optoplanar® Packaging Technology Allows More Than 10 mm Creepage and Clearance Distance, and 0.5 mm Insulation Distance to Achieve Reliable and High Voltage Insulation ■ High Noise Immunity Characterized by Common Mode Transient Immunity (CMTI) – 2 |
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Fairchild Semiconductor |
MOSFET General Description Extended TJ rating to 175°C Shielded Gate MOSFET Technology Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A High performance technology for extremely low rDS(on) Termination is |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A • RDS(on) = 156 mΩ (Typ.) @ VGS = 5 V, ID = 1.8 A • Low Gate Charge (Typ. 2.9 nC) • Low Crss (Typ. 2.04 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Desc |
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Fairchild Semiconductor |
80V N-Channel MOSFET • • • • • • • 160A, 80V, RDS(on) = 0.007Ω @VGS = 10 V Low gate charge ( typical 220 nC) Low Crss ( typical 530 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3 |
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Fairchild Semiconductor |
Synchronous Presettable BCD Decade Counter s Synchronous counting and loading s High-speed synchronous expansion s Typical count rate of 120 MHz Ordering Code: Order Number 74F160ASC 74F160ASJ 74F160APC 74F162ASC 74F162APC Package Number M16A M16D N16E M16A N16E Package Description 16-Lead S |
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Fairchild Semiconductor |
600W Transient Voltage Suppressors • Glass-Passivated Junction • 600 W Peak Pulse Power Capability at 1.0 ms • Excellent Clamping Capability • Low Incremental Surge Resistance • Fast Response Time; Typically < 1.0 ps from 0 V to BV for Uni-directional and 5.0 ns for Bi-directional • T |
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Fairchild Semiconductor |
Transient Voltage Suppressors • • • • • Glass passivated junction. 500W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5. |
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Fairchild Semiconductor |
10-BIT / 40 MSPS / 160 mW A/D CONVERTER • • • • • • • • • • Monolithic 40 MSPS converter 160 mW power dissipation On-chip track-and-hold Single +5 V power supply TTL/CMOS outputs 5 pF input capacitance Low cost Tri-state output buffers High ESD protection: 3,500 V minimum Selectable +3 V o |
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Fairchild Semiconductor |
(MST5xx0C) THREE DIGIT STICK DISPLAY n accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be rea |
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Fairchild Semiconductor |
(1.5KE Series) 1500 Watt Transient Voltage Suppressors • • • • • Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.0 ns for bid |
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Fairchild Semiconductor |
NPN Silicon Transistor (FDC655 MOSFET) VCS(ON) 0.131 V IC 0.5 A Equiv RCS(ON) 0.261 Ω ∗ • Low Equivalent On Resistance • Very Fast Switch : 150KHz • Squared RBSOA : Up to 1600Volts • Avalanche Rated • Low Driving Capacitance, no Miller Capacitance (Typ 12pF Cap @ 200vo |
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Fairchild Semiconductor |
Red GaAsP LED Lamps lative Humidity at 85°C 85% = Maximum Power Dissipation Total Dissipation at TA 25°C Derate linearly from 25°C 120 mW 1.B mW/oC Maximum Voltage and Currents VR Reverse Voltage 3.0 V IF Forward dc Current 50 mA Ipk Peak Forward Current (1.0 |
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Fairchild Semiconductor |
1500W Transient Voltage Suppressors • Glass-Passivated Junction • 1500 W Peak Pulse Power Capability at 1.0 ms • Excellent Clamping Capability • Low Incremental Surge Resistance • Fast Response Time; Typically < 1.0 ps from 0 V to BV for Uni-directional, 5.0 ns for Bidirectional • Typi |
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Fairchild Semiconductor |
1500W Transient Voltage Suppressors • Glass-Passivated Junction • 1500 W Peak Pulse Power Capability at 1.0 ms • Excellent Clamping Capability • Low Incremental Surge Resistance • Fast Response Time; Typically < 1.0 ps from 0 V to BV for Uni-directional, 5.0 ns for Bidirectional • Typi |
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Fairchild Semiconductor |
16-Bit to 32-Bit Multiplexer/Demultiplexer Bus Switch s Undershoot hardened to −2V (A and B Ports). s Slower Output Enable times prevent signal disruption s 4Ω switch connection between two ports. s Minimal propagation delay through the switch. s Low lCC. s Zero bounce in flow-through mode. s Control in |
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Desde 2024. D4U Semiconductor.
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