| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
FDPF12N50FT • RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 21nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant tm Description These N-Channel enhancement mode power field eff |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 550 mΩ (Typ.) @ VGS = 10 V, ID = 6 A • Low Gate Charge (Typ. 22 nC) • Low Crss (Typ. 11 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply November 2013 Description UniFET |
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Fairchild Semiconductor |
N-Channel MOSFET • 9.0 A, 200 V, RDS(on) = 280 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 16 nC) • Low Crss (Typ. 17 pF) • 100% Avalanche Tested D D G S D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VG |
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Fairchild Semiconductor |
200V Logic Level N-Channel MOSFET • 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V • Low gate charge ( typical 16 nC) • Low Crss ( typical 17 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Low level gate drive requirement allowing direct opration from logic drive |
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Fairchild Semiconductor |
N-Channel Logic Level Power MOSFET • 12A, 100V • rDS(ON) = 0.200Ω • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Tra |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT us |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is |
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Fairchild Semiconductor |
200V N-Channel MOSFET < 4 < !$ 8 * 1,)562 1,/((62 8 )(( '( 57 9: ±9( * % % % * = % |
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Fairchild Semiconductor |
N-Channel MOSFET • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A • Low Gate Charge (Typ. 48 nC) • Low Crss (Typ. 21 pF) • 100% Avalanche Tested D GDS TO-220 Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM D |
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Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET • • • • • • • 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct opration from logic drive |
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Fairchild Semiconductor |
17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET JEDEC TO-252AA DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10V - rDS(ON) = 0.071Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.f |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 550 m (Typ.) @ VGS = 10 V, ID = 6 A • Low Gate Charge (Typ. 22 nC) • Low Crss (Typ. 12 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D November 2013 Description |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 22nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 22nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A • Low Gate Charge (Typ. 23 nC ) • Low Crss (Typ. 14 pF ) • 100% Avalanche Tested • ESD Improved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply D |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 550 mΩ (Typ.) @ VGS = 10 V, ID = 6 A • Low Gate Charge (Typ. 22 nC) • Low Crss (Typ. 11 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply November 2013 Description UniFET |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is |
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Desde 2024. D4U Semiconductor.
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