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Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 52 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS=10 V RDS(ON) = 0.020 Ω @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. |
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Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 35 A, 20 V. RDS(ON) = 0.023 Ω @ VGS= 4.5 V RDS(ON) = 0.028 Ω @ VGS= 2.7 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor |
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Fairchild |
P-Channel Logic Level Enhancement Mode Field Effect Transistor -24 A, -20 V. RDS(ON) = 0.05 Ω @ VGS= -4.5 V. RDS(ON) = 0.07Ω @ VGS= -2.7 V. RDS(ON) = 0.075 Ω @ VGS= -2.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an extern |
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Fairchild |
P-Channel Logic Level Enhancement Mode Field Effect Transistor -30 A, -30 V. RDS(ON) = 0.042 Ω @ VGS= -4.5 V RDS(ON) = 0.025 Ω @ VGS= -10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppres |
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Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 48A, 50V. RDS(ON) = 0.025Ω @ VGS = 5V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the ne |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor 36 and 32A, 80V. RDS(ON) = 0.042and 0.045Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temper |
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fairchild |
Low Power MOSFET 512-FDG6304P ♦ 512-FDC6302P ♦ 512-FDG6306P ♦ 512-FDG6308P ♦ 512-FDS9933A ♦ 512-FDC6306P MOUSER STOCK NO. Mfr. Mfr. Part No. Package VDS RDS Qg (on) (V) (mΩ) (nC) SO-8 SOT-223 SOT-23 TSSOP-8 SOT-23 SOT-23 BGA-12 BGA-6 SOT-23 SOT-23 SSOT-6 TO-220 TO- |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor 15A, 50V. RDS(ON) = 0.10Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature r |
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Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 15A, 50V. RDS(ON) = 0.1Ω @ VGS = 5V Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor 19 and 17A, 80V. RDS(ON) = 0.08 and 0.10Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction tempera |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor 19 and 17A, 80V. RDS(ON) = 0.08 and 0.10Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction tempera |
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Fairchild |
N-Channel FET 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the ne |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor 26 and 24A, 100V. RDS(ON) = 0.065 and 0.080Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temp |
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Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 75A, 50V, RDS(ON) = 0.015Ω @ VGS = 5V Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the nee |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor 70A, 50V. RDS(ON) = 0.013Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor 60 and 54A, 80V. RDS(ON) = 0.022 and 0.025Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction tempe |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor 42 and 40A, 100V. RDS(ON) = 0.038 and 0.042Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temp |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor 15A, 60V. RDS(ON) = 0.10Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature r |
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Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 15A, 60V. RDS(ON) = 0.1Ω @ VGS = 5V Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor 12 and 11A, 80V. RDS(ON) = 0.16 and 0.20Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction tempera |
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Desde 2024. D4U Semiconductor.
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