| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Fairchild |
PNP Transistor ustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage *Base-Emitter ON Voltage Output Capacitance Test Condition IC = - 30 |
|
|
|
|
Fairchild |
NPN Epitaxial Silicon Transistor • High-Voltage and High-Reliability • D-PAK for Surface-Mount Applications • Lead-Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “ - I ” Suffix) • Electrically Similar to Popular TIP47 and TIP50 1 D-PAK 1 I-PAK 1.Base 2.Col |
|
|
|
|
Fairchild |
NPN Silicon Darlington Transistor • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127 1 D-PAK 1.Base 2.Collector 3.Emitter Equival |
|
|
|
|
Fairchild |
General Purpose Amplifier JD29C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage Current Gain Bandwidth Product VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 0.2A VCE |
|
|
|
|
Fairchild Semiconductor |
NPN Silicon Darlington Transistor • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) November 2006 tm Equivalent Circuit C B 1 D-PAK 1.Base 2.Collector 3.Emitter R1 R2 Absolute Maximum Ratings* Ta = 25°C unless other |
|
|
|
|
Fairchild Semiconductor |
PNP Silicon Darlington Transistor |
|
|
|
|
Fairchild |
General Purpose Amplifier Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product Test Condition IC = - 30mA, IB = 0 VCE = - 30V, IE = 0 VCB = - 70V, I |
|
|
|
|
Fairchild |
General Purpose Amplifier JD29C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage Current Gain Bandwidth Product VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 0.2A VCE |
|
|
|
|
Fairchild |
General Purpose Amplifier Current Collector Cut-off Current Emitter Cut-off Current *DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product Test Condition IC = 30mA, IB = 0 VCE = 30V, IE = 0 VCB = 70V, IE = 0 VEB = 5V, |
|
|
|
|
Fairchild |
High Voltage Power Transistor |
|
|
|
|
Fairchild |
General Purpose Amplifier DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product Test Condition IC = 30mA, IB = 0 VCE = 60V, IB = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 0.3A VCE = 4V, IC = 3A IC = 6A, IB |
|
|
|
|
Fairchild |
PNP Epitaxial Silicon Transistor ration Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product Test Condition IC = - 30mA, IB = 0 VCE = -60V, IB = 0 VCE = -100V, VBE = 0 VBE = -5V, IC = 0 VCE = -4V, IC = -0.3A VCE = -4V, IC = -3A IC = -6A, IB = -600mA VCE = -6A, IC = -4A V |
|
|
|
|
Fairchild |
PNP Epitaxial Silicon Transistor • General-Purpose Power and Switching such as Output or Driver Stages in Applications • D-PAK for Surface-Mount Applications • Lead-Formed for Surface Mount Application (No Suffix) • Fast Switching Speeds • Low Collector Emitter Saturation Voltage 1 |
|
|
|
|
Fairchild |
NPN Epitaxial Silicon Transistor • High-Voltage and High-Reliability • D-PAK for Surface-Mount Applications • Lead-Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “ - I ” Suffix) • Electrically Similar to Popular TIP47 and TIP50 1 D-PAK 1 I-PAK 1.Base 2.Col |
|
|
|
|
Fairchild |
D-PAK est Condition IC=100mA, IB=0 VCB=40V, IE=0 VEBO=8V, IC=0 VCE=1V, IC=500mA VCE=1V, IC=2A VCE=2V, IC=5A IC=500mA, IB=50mA IC=2A, IB=200mA IC=5A, IB=1A IC=5A, IB=2A VCE=1V, IC=2A VCE=10V, IC=100mA VCB=10V, IE=0, f=0.1MHz 65 80 70 45 10 180 0.3 0.75 1.8 |
|
|
|
|
Fairchild |
PNP Transistor BO = - 8V, IC = 0 VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 2A VCE = - 2V, IC = - 5A IC = - 500mA, IB= - 50mA IC = - 2A, IB = - 200mA IC = - 5A, IB = - 1A IC = - 5A, IB = - 1A VCE = - 1V, IC = - 2A VCE = - 10V, IC = - 100mA VCB = - 10V, IE = 0, f = |
|
|
|
|
Fairchild |
NPN Epitaxial Silicon Transistor • General Purpose Amplifier • Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C February 2012 1 D-PAK 1 I-PAK 1.Base 2.C |
|
|
|
|
Fairchild |
NPN Epitaxial Silicon Transistor • General Purpose Amplifier • Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C February 2012 1 D-PAK 1 I-PAK 1.Base 2.C |
|
|
|
|
Fairchild |
General Purpose Amplifier JD32C ICES Collector Cut-off Current : MJD32 : MJD32C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product VCE = - 40V, VBE = 0 VCE = - |
|
|
|
|
Fairchild |
General Purpose Amplifier JD32C ICES Collector Cut-off Current : MJD32 : MJD32C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product VCE = - 40V, VBE = 0 VCE = - |
|
Desde 2024. D4U Semiconductor.
|